PDF KMM366F410CK Data sheet ( Hoja de datos )

Número de pieza	KMM366F410CK
Descripción	(KMM366F400CK/410CK) DRAM Module
Fabricantes	Samsung Semiconductor
Logotipo
Hay una vista previa y un enlace de descarga de KMM366F410CK (archivo pdf) en la parte inferior de esta página. Total 20 Páginas
No Preview Available ! DRAM MODULE KMM366F400CK KMM366F410CK KMM366F400CK & KMM366F410CK EDO Mode without buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM366F40(1)0CK is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(1)0CK consists of sixteen CMOS 4Mx4bits DRAMs in SOJ 300mil package and one 1K/2K EEPROM for SPD in 8-pin TSSOP package mounted on a 168-pin glass- epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM366F40(1)0CK is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets. PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tHPC 25ns 30ns FEATURES • Part Identification - KMM366F400CK (4096 cycles/64ms Ref. SOJ) - KMM366F410CK (2048 cycles/32ms Ref. SOJ) • New JEDEC standard proposal without buffer • Serial Presence Detect with EEPROM • Extended Data Out Mode Operation • CAS-before-RAS Refresh capability • RAS-only and Hidden refresh capability • LVTTL compatible inputs and outputs • Single +3.3V±0.3V power supply • PCB : Height(1000mil), double sided component PIN CONFIGURATIONS PIN NAMES Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back Pin Name Function 1 VSS 29 CAS1 57 DQ18 85 VSS 113 CAS5 141 DQ50 2 DQ0 30 RAS0 58 DQ19 86 DQ32 114 RAS1 142 DQ51 A0 - A11 A0 - A10 Address Input(4K ref.) Address Input(2K ref.) 3 DQ1 31 OE0 59 VCC 87 DQ33 115 DU 143 VCC DQ0 - DQ63 Data In/Out 4 DQ2 32 VSS 60 DQ20 88 DQ34 116 VSS 144 DQ52 5 DQ3 33 A0 61 NC 89 DQ35 117 A1 145 NC 6 VCC 34 A2 62 DU 90 VCC 118 A3 146 DU 7 DQ4 35 A4 63 NC 91 DQ36 119 A5 147 NC W0, W2 OE0, OE2 RAS0, RAS2 Read/Write Enable Output Enable Row Address Strobe 8 DQ5 36 A6 64 VSS 92 DQ37 120 A7 148 VSS CAS0 - CAS7 Colume Address Strobe 9 DQ6 37 A8 65 DQ21 93 DQ38 121 A9 149 DQ53 10 DQ7 38 A10 66 DQ22 94 DQ39 122 A11 150 DQ54 11 DQ8 39 A12 67 DQ23 95 DQ40 123 A13 151 DQ55 VCC VSS Power(+3.3V) Ground 12 VSS 40 VCC 68 VSS 96 VSS 124 VCC 152 VSS NC No Connection 13 DQ9 41 VCC 69 DQ24 97 DQ41 125 DU 153 DQ56 14 DQ10 42 DU 70 DQ25 98 DQ42 126 DU 154 DQ57 15 DQ11 43 VSS 71 DQ26 99 DQ43 127 VSS 155 DQ58 DU SDA Don′t use Serial Address /Data I/O 16 DQ12 44 OE2 72 DQ27 100 DQ44 128 DU 156 DQ59 SCL Serial Clock 17 DQ13 45 RAS2 73 VCC 101 DQ45 129 RAS3 157 VCC SA0 -SA2 Address in EEPROM 18 VCC 46 CAS2 74 DQ28 102 VCC 130 CAS6 158 DQ60 19 DQ14 47 CAS3 75 DQ29 103 DQ46 131 CAS7 159 DQ61 20 DQ15 48 W2 76 DQ30 104 DQ47 132 DU 160 DQ62 21 CB0 49 VCC 77 DQ31 105 CB4 133 VCC 161 DQ63 22 CB1 50 NC 78 VSS 106 CB5 134 NC 162 VSS CB0 - CB7 Check Bit * These pins are not used in this modeule. ** These pins should be NC in the system which does not support SPD. 23 VSS 51 NC 79 NC 107 VSS 135 NC 163 NC 24 NC 52 CB2 80 NC 108 NC 136 CB6 164 NC 25 NC 53 CB3 81 NC 109 NC 137 CB7 165 SA0 www.DataSheet4U.com26 VCC 54 VSS 82 SDA 110 VCC 138 VSS 166 SA1 27 W0 55 DQ16 83 SCL 111 DU 139 DQ48 167 **SA2 28 CAS0 56 DQ17 84 VCC 112 CAS4 140 DQ49 168 VCC NOTE : A12 is used for only KMM366F400CK (4K ref.) www.DataSheet4U.com 1 page DRAM MODULE KMM366F400CK KMM366F410CK AC CHARACTERISTICS (0°C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.) Test condition : Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V, Output loading CL=100pF Parameter Symbol RAS to W dealy time Column address to W delay time CAS precharge to W delay time CAS setup time (CAS-before-RAS refresh) CAS hold time (CAS-before-RAS refresh) RAS to CAS precharge time CAS precharge time (CBR counter test cycle) Access time from CAS precharge Hyper page mode cycle time Hyper page mode read-modify write cycle CAS precharge time (Hyper page cycle RAS pulse width (Hyper page cycle) RAS hold time from CAS precharge OE access time OE to data delay Output buffer turn off delay time from OE OE command hold time W to RAS precharge time (C-B-R refresh) W to RAS hold time (C-B-R refresh) Output data hold time Output buffer turn off delay from RAS Output buffer turn off delay from W W to data delay OE to CAS hold time CAS hold time to OE OE precharge time W pulse width tRWD tAWD tCPWD tCSR tCHR tRPC tCPT tCPA tHPC tHPRWC tCP tRASP tRHCP tOEA tOED tOEZ tOEH tWRP tWRH tDOH tREZ tWEZ tWED tOCH tCHO tOEP tWPE -5 Min Max 73 48 53 5 10 5 20 28 25 68 8 50 200K 30 13 13 3 13 13 10 10 5 3 13 3 13 15 5 5 5 5 -6 Min Max 85 55 60 5 10 5 20 35 30 77 10 60 200K 35 15 15 3 15 15 10 10 5 3 15 3 15 15 5 5 5 5 Unit Note ns 7 ns 7 ns ns ns ns ns ns 3 ns 13 ns 13 ns ns ns ns ns ns 7,11 ns ns ns ns ns 6,11,12 ns 6,11 ns ns ns ns ns 5 Page DRAM MODULE HYPER PAGE READ CYCLE KMM366F400CK KMM366F410CK VIH - RAS VIL - VIH - CAS VIL - VIH - A VIL - tRASP tCRP tCSH tRCD tHPC tCP tCAS ¡ó tHPC tCP tHPC tCP tRHCP tCAS tCAS tCAS tRAD tASR tRAH tASC tCAH tASC tCAH tASC tCAH tASC tCAH ROW ADDR COLUMN ADDRESS COLUMN ADDRESS COLUMN ADDR COLUMN ADDRESS tRP tREZ VIH - W VIL - VIH - OE VIL - VOH - DQ VOL - tRCS tCAC tAA tCPA tAA tCAC tOEA tRAC tCAC tDOH VALID DATA-OUT tOLZ tCLZ VALID DATA-OUT tCAC tAA tCPA tOCH tOEA tRCH tRRH tCPA tCAC tAA tCHO tOEP tOEP tOEZ tOEZ tOEA VALID DATA-OUT tOEZ VALID DATA-OUT Don′t care Undefined 11 Page

Páginas	Total 20 Páginas
PDF Descargar	[ Datasheet KMM366F410CK.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
KMM366F410CK	(KMM366F400CK/410CK) DRAM Module	Samsung Semiconductor
KMM366F410CK1	(KMM366F400CK1/410CK1) DRAM Module	Samsung Semiconductor

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar