DataSheetWiki


EDE5108ABSE fiches techniques PDF

Elpida Memory - (EDE51xxABSE) 512M bits DDR2 SDRAM

Numéro de référence EDE5108ABSE
Description (EDE51xxABSE) 512M bits DDR2 SDRAM
Fabricant Elpida Memory 
Logo Elpida Memory 





1 Page

No Preview Available !





EDE5108ABSE fiche technique
DATA SHEET
512M bits DDR2 SDRAM
EDE5104ABSE (128M words × 4 bits)
EDE5108ABSE (64M words × 8 bits)
EDE5116ABSE (32M words × 16 bits)
Description
The EDE5104ABSE is a 512M bits DDR2 SDRAM
organized as 33,554,432 words × 4 bits × 4 banks.
The EDE5108ABSE is a 512M bits DDR2 SDRAM
organized as 16,777,216 words × 8 bits × 4 banks.
They are packaged in 64-ball FBGA (µBGA) package.
The EDE5116ABSE is a 512M bits DDR2 SDRAM
organized as 8,388,608 words × 16 bits × 4 banks.
It is packaged in 84-ball FBGA (µBGA) package.
Features
Power supply: VDD, VDDQ = 1.8V ± 0.1V
Double-data-rate architecture: two data transfers per
clock cycle
Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
Four internal banks for concurrent operation
Data mask (DM) for write data
Burst lengths: 4, 8
/CAS Latency (CL): 3, 4, 5
Auto precharge operation for each burst access
Auto refresh and self refresh modes
7.8µs average periodic refresh interval
SSTL_18 compatible I/O
Posted CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
Programmable RDQS, /RDQS output for making × 8
organization compatible to × 4 organization
/DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation.
FBGA (µBGA) package with lead free solder
(Sn-Ag-Cu)
RoHS compliant
Document No. E0323E90 (Ver. 9.0)
Date Published September 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2002-2005

PagesPages 30
Télécharger [ EDE5108ABSE ]


Fiche technique recommandé

No Description détaillée Fabricant
EDE5108ABSE (EDE51xxABSE) 512M bits DDR2 SDRAM Elpida Memory
Elpida Memory

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche