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PDF 20N60C2 Data sheet ( Hoja de datos )
| Número de pieza | 20N60C2 | |
| Descripción | SPP20N60C2 | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 20N60C2 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
www.DataShee•t4UP.ceormiodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Product Summary
VDS @ Tjmax 650
RDS(on)
0.19
ID 20
V
Ω
A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
P-TO220-3-31
3
12
Type
SPP20N60C2
SPB20N60C2
SPA20N60C2
Package
Ordering Code
P-TO220-3-1 Q67040-S4320
P-TO263-3-2 Q67040-S4322
P-TO220-3-31 Q67040-S4333
Marking
20N60C2
20N60C2
20N60C2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=10A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=20A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IS = 20 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Page 1
Symbol
Value
SPP_B SPA
ID
20 201)
13 131)
ID puls
EAS
40
690
40
690
Unit
A
A
mJ
EAR 1 1
IAR 20 20 A
dv/dt
6
6 V/ns
VGS
VGS
Ptot
Tj , Tstg
±20 ±20 V
±30 ±30
208 34.5 W
-55...+150
°C
2002-08-12
1 page  
1 Power dissipation
Ptot = f (TC)
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
2 Power dissiaption FullPAK
Ptot = f (TC)
SPP20N60C2
240
W
www.DataSheet4U.co2m00
180
160
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
35
W
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
10 -1
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
tp = 1 ms
tp = 10 ms
DC
10
-2
10
0
10 1
10 2 V 10 3
10
-2
10
0
10 1
VDS
Page 5
10 2 V 10 3
VDS
2002-08-12
5 Page 
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Definition of diodes switching characteristics
www.DataSheet4U.com
Page 11
2002-08-12
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet 20N60C2.PDF ] | |
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