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Numéro de référence | 28F640W18 | ||
Description | (28FxxxW18) 1.8 V Wireless Flash Memory | ||
Fabricant | Intel | ||
Logo | |||
1 Page
1.8 Volt Intel® Wireless Flash Memory
(W18)
28F320W18, 28F640W18, 28F128W18
Preliminary Datasheet
Product Features
s Performance
— 70 ns Asynchronous reads for 32 and 64 Mbit,
90 ns for 128 Mbit
m— 14 ns Clock to Data Output (tCHQV)
— 20 ns Page Mode Read Speed
o— 4-Word, 8-Word, and Continuous-Word Burst
Modes
.c— Burst and Page Modes in Parameter and Main
Partitions
— Programmable WAIT Configuration
— Enhanced Factory Programming Mode@
U3.50 µs/Word (Typ)
— Glueless 12 V interface for Fast Factory
t4Programming @ 8 µs/Word (Typ)
— 1.8 V Low-Power Programming @ 12 µs/Word
(Typ)
e— Program or Erase during Reads
s Architecture
e— Multiple 4-Mbit Partitions
— Dual-Operation: Read-While-Write or Read-
hWhile-Erase
— Eight, 4-Kword Parameter Code and Data
Blocks
S— 32-Kword Main Code and Data Blocks
— Top and Bottom Parameter Configurations
tas Power Operation
— 1.7 V to 1.95 V Read and Write Operations
— 1.7 V to 2.24 V VCCQ for I/O Isolation
a— Standby Current: 5 µA (Typ)
— Read Current: 7 mA (Typ)
s Software
— 5 µs (Typ) Program Suspend
— 5 µs (Typ) Erase Suspend
— Intel® Flash Data Integrator (FDI) Software
Optimized
— Intel Basic Command Set Compatible
— Common Flash Interface (CFI)
s Quality and Reliability
— Extended Temperature: –40 °C to +85 °C
— Minimum 100,000 Erase Cycles per Block
— ETOX™ VII Flash Technology (0.18 µm)
s Security
— 128-bit Protection Register: 64 Unique Device
Identifier Bits; 64 User-Programmable OTP
Bits
— Absolute Write Protection ⇒VPP = GND
— Erase/Program Lockout during Power
Transitions
— Individual Dynamic Zero-Latency Block
Locking
— Individual Block Lock-Down
s Density and Packaging
— 32 Mbit and 128 Mbit in a VF BGA Package
— 64 Mbit in a µBGA*Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
µBGA* and VF BGA Packages
— 16-bit wide Data Bus
.DThe 1.8 Volt Intel® Wireless Flash memory with flexible multi-partition dual-operation provides high-
performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs.
wCombining high read performance with flash memory’s intrinsic non-volatility, 1.8 Volt Intel Wireless Flash
memory eliminates the traditional system-performance paradigm of shadowing redundant code memory from
slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases
wreliability and reduces overall system power consumption and cost.
mThe 1.8 Volt Intel Wireless Flash memory’s flexible multi-partition architecture allows programming or erasing to
woccur in one partition while reading from another partition. This allows for higher data write throughput
ocompared to single partition architectures. The dual-operation architecture also allows two processors to
.cinterleave code operations while program and erase operations take place in the background. The designer can
also choose the size of the code and data partitions via the flexible multi-partition architecture.
t4UThe 1.8 Volt Intel Wireless Flash memory is manufactured on Intel’s 0.18 µm ETOX™ VII process technology. It
is available in µBGA and VF BGA packages which are ideal for board-constrained applications.
SheeNotice: This document contains preliminary information on new products in production. The
taspecifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
.Da 290701-003
www June 2001
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Pages | Pages 70 | ||
Télécharger | [ 28F640W18 ] |
No | Description détaillée | Fabricant |
28F640W18 | (28FxxxW18) 1.8 V Wireless Flash Memory | Intel |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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