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PDF 55NF06 Data sheet ( Hoja de datos )
| Número de pieza | 55NF06 | |
| Descripción | STP55NF06 | |
| Fabricantes | ST Microelectronics | |
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Hay una vista previa y un enlace de descarga de 55NF06 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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STB55NF06 STB55NF06-1
STP55NF06 STP55NF06FP
N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I²PAK/D²PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP55NF06
www.DataSheet4U.cSoTmB55NF06-1
STB55NF06
STP55NF06FP
60 V
60 V
60 V
60 V
<0.018 Ω
<0.018 Ω
<0.018 Ω
<0.018 Ω
50 A
50 A
50 A
50 A(*)
s TYPICAL RDS(on) = 0.015 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
s THROUGH-HOLE I²PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX “-1")
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
TO-220FP
3
2
1
TO-220
3
2
1
123
I²PAK
TO-262
(Suffix “-1”)
3
1
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*)Refer to soa for the max allowable current value on FP-type due
to Rth value
March 2003
.
Value
STP_B55NF06(-1)
STP55NF06FP
60
60
± 20
50 50(*)
35 35(*)
200 200(*)
110 30
0.73
0.2
7
350
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤50A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 25A, VDD= 30V
1/12
1 page  
Gate Charge vs Gate-source Voltage
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
Capacitance Variations
www.DataSheet4U.com
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
5/12
5 Page 
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
www.DataSheet4U.com
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5
0.059
C 12.8 13.2 0.504 0.520
D 20.2
0.795
G 24.4 26.4 0.960 1.039
N 100
3.937
T 30.4 1.197
TAPE MECHANICAL DATA
DIM.
mm
MIN. MAX.
inch
MIN. MAX.
A0
10.5
10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1
1.59
1.61 0.062 0.063
E
1.65
1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082
R 50
1.574
T
0.25
0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956
BASE QTY
1000
BULK QTY
1000
* on sales type
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 55NF06.PDF ] | |
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