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PDF MBN1200GS12AW Data sheet ( Hoja de datos )
| Número de pieza | MBN1200GS12AW | |
| Descripción | Silicon N-Channel IGBT | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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IGBT MODULE
MBN1200GS12AW
Silicon N-channel IGBT
OUTLINE DRAWING
FEATURES
2-M4
130
110
4-φ6.5 Unit in mm
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
E
G
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
E
C
13 30 36 19 2-M8
U.comABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Weight: 1,300 (g)
E
E
G
C
TERMINALS
t4Item
Symbol
Unit
MBN1200GS12AW
Collector Emitter Voltage
Gate Emitter Voltage
eCollector Current
DC
eForward Current
1ms
DC
h1ms
Collector Power Dissipation
SJunction Temperature
Storage Temperature
taIsolation Voltage
Screw Torque
Terminals
aMounting
VCES
VGES
IC
ICp
IF
IFM
Pc
Tj
Tstg
VISO
-
-
V
V
A
A
W
°C
°C
VRMS
N.m
(kgf.cm)
1,200
±20
1,200
2,400
1,200
2,400
5,600
-40 ~ +150
-40 ~ +125
2,500(AC 1 minute)
1.37(14)/7.84(80)
2.94(30)
(1)
(2)
(3)
Notes:(1)RMS Current of Diode 360Arms max.
.D(2)Recommended Value 1.18/7.35N.m(12/75kgf.cm)
(3)Recommended Value 2.45N.m(25kgf.cm)
CHARACTERISTICS (Tc=25°C )
wItem
Collector Emitter Cut-Off Current
wGate Emitter Leakage Current
wCollector Emitter Saturation Voltage
Symbol
I CES
IGES
VCE(sat)
Unit
mA
nA
V
Min.
-
-
-
Typ.
-
-
2.9
Max.
Test Conditions
2.0 VCE=1,200V,VGE=0V
±500 VGE=±20V,VCE=0V
3.6 IC=1,200A,VGE=15V
Gate Emitter Threshold Voltage
mInput Capacitance
oRise Time
.cSwitching Times Turn On Time
UFall Time
VGE(TO)
Cies
tr
ton
tf
V
nF
ms
- - 10 VCE=5V, IC =1,200mA
- 112 - VCE=10V,VGE=0V,f=1MHz
- 0.6 1.6 VCC=600V
- 0.8 2.2 RL=0.5W
- 0.45 0.55 RG=3.3W
(4)
t4Turn Off Time
toff
- 1.4 1.6 VGE=±15V
Peak Forward Voltage Drop
VFM V - 2.5 3.7 IF=1,200A,VGE=0V
eeReverse Recovery Time
hThermal Impedance IGBT
SFWD
trr
Rth(j-c)
Rth(j-c)
ms
°C/W
-
-
-
- 0.5 IF=1,200A,VGE=-10V, di/dt=1200A/ms
- 0.022
Junction to case
- 0.05
taNotes:(4) RG value is the test condition’s value for decision of the switching times, not recommended value.
aDetermine the suitable RG value after the measurement of switching waveforms
www.D(overshoot voltage,etc.)with appliance mounted.
PDE-N1200GS12AW-0
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBN1200GS12AW.PDF ] | |
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