|
|
Número de pieza | HM51W17805 | |
Descripción | 16M EDO DRAM | |
Fabricantes | Elpida Memory | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HM51W17805 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
No Preview Available ! HM51W17805 Series
16 M EDO DRAM (2-Mword × 8-bit)
2 k Refresh
E0155H10 (Ver. 1.0)
(Previous ADE-203-631D (Z))
Jun. 27, 2001
Description
The HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most
advanced CMOS technology for high performance and low power. The HM51W17805 offers Extended Data
Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM51W17805 to
be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.
Features
• Single 3.3 V (±0.3 V)
• Access time: 50 ns/60 ns/70 ns (max)
• Power dissipation
Active mode: 396 mW/360 mW/324 mW (max)
Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
• EDO page mode capability
• Long refresh period
2048 refresh cycles : 32 ms
: 128 ms (L-version)
• 4 variations of refresh
RAS-only refresh
CAS-before-RAS refresh
Hidden refresh
Self refresh (L-version)
• Battery backup operation (L-version)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
1 page Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
HM51W17805 Series
Symbol
VT
VCC
Iout
PT
Topr
Tstg
Value
–0.5 to VCC + 0.5 (≤ 4.6 V (max))
–0.5 to +4.6
50
1.0
0 to +70
–55 to +125
Unit
V
V
mA
W
°C
°C
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Note: 1. All voltage referred to VSS.
Symbol
VCC
VIH
VIL
Min
3.0
2.0
–0.3
Typ
3.3
—
—
Max
3.6
VCC + 0.3
0.8
Unit
V
V
V
Note
1
1
1
Data Sheet E0155H10
5
5 Page HM51W17805 Series
EDO Page Mode Cycle
HM51W17805
-5 -6 -7
Parameter
Symbol Min Max Min Max Min Max Unit
EDO page mode cycle time
t HPC
EDO page mode RAS pulse width tRASP
Access time from CAS precharge tCPA
RAS hold time from CAS precharge tCPRH
Output data hold time from CAS low tDOH
CAS hold time referred OE
t COL
CAS to OE setup time
t COP
Read command hold time from CAS tRCHC
precharge
20 —
25 —
30 —
ns
— 100000 — 100000 — 100000 ns
— 30
— 35
— 40
ns
30 —
35 —
40 —
ns
3—
3—
3—
ns
8—
10 —
13 —
ns
5—
5—
5—
ns
30 —
35 —
40 —
ns
Notes
19
16
9, 17
9, 17
EDO Page Mode Read-Modify-Write Cycle
HM51W17805
-5 -6
Parameter
Symbol Min Max Min
EDO page mode read- modify-write tHPRWC 57 — 68
cycle time
WE delay time from CAS precharge tCPW
45 — 54
-7
Max Min
— 79
— 62
Max Unit
ns
ns
Notes
14
Refresh
Parameter
Refresh period
Refresh period (L-version)
Symbol
t REF
t REF
Max
32
128
Unit
ms
ms
Note
2048 cycles
2048 cycles
Data Sheet E0155H10
11
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet HM51W17805.PDF ] |
Número de pieza | Descripción | Fabricantes |
HM51W17805 | 16M EDO DRAM | Elpida Memory |
HM51W17805B | 2M x 8-Bit DRAM | Hitachi |
HM51W17805BLTT | 2M x 8-Bit DRAM | Hitachi |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |