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HM51W16400BS6 fiches techniques PDF

ETC - CMOS 16M DRAM

Numéro de référence HM51W16400BS6
Description CMOS 16M DRAM
Fabricant ETC 
Logo ETC 





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HM51W16400BS6 fiche technique
U.comC-MOS 16 M (4,194,304 x 4)-BIT DYNAMIC RAM
t4—TOP VIEW—
Shee1 VDD (+3.3 V) GND 26
ataI/O1 I/O 2
25 I/O4 I/O
w.DI/O2 I/O 3
ww WE IN 4
24 I/O3 I/O
23 CAS IN
9
A0
10 A1
11
A2
12
A3
15
A4
16
A5
17 A6
18
HM51W16400BS6 (1/2)
IL08
2
I/O1
3
I/O2
24
I/O3
25
I/O4
RAS IN 5
omA11 IN 6
22 OE IN
21 A9 IN
U.cA10 IN 8
19 A8 IN
t4A0 IN 9
18 A7 IN
eA1 IN 10
17 A6 IN
heA2 IN 11
16 A5 IN
SA3 IN 12
15 A4 IN
www.Data13 VDD (+3.3 V) GND 14
A7
19
A8
21
A9
8
A10
6
A11
RAS CAS WE OE
5 23 4 22
INPUT
A0 - A11
CAS
OE
RAS
WE
: ADDRESS
: COLUMN ADDRESS STROBE
: OUTPUT ENABLE
: ROW ADDRESS STROBE
: READ/WRITE ENABLE
INPUT/OUTPUT
I/O1 - I/O4 : DATA
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