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NEC - MOSFET ( Transistor ) - 2SK2481

Numéro de référence K2481
Description MOSFET ( Transistor ) - 2SK2481
Fabricant NEC 
Logo NEC 





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K2481 fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2481
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2481 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
Low On-Resistance
RDS(on) = 4.0 (VGS = 10 V, ID = 2.0 A)
Low Ciss Ciss = 900 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 900 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.0
A
Drain Current (pulse)*
ID(pulse) ±12
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
70 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 4.0 A
Single Avalanche Energy**
EAS 65.9 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2
10.0
1.3 ± 0.2
4
1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1
2.54
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
Drain
Gate
Body
Diode
Source
Document No. D10273EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
© 1995

PagesPages 8
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