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Numéro de référence | 100BGQ100 | ||
Description | Schottky Rectifier ( Diode ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
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Bulletin PD-20999 rev. B 12/02
100BGQ100
100BGQ100J
100 Amp
omMajor Ratings and Characteristics
.cCharacteristics
Values Units
UIF(AV) Rectangular waveform
t4@TC
IDC Maximum
eVRRM
IFSM @ tp = 5 µs sine
eVF @100Apk typical
h@TJ
TJ range
100
129
141
100
6300
0.74
125
-55 to 175
A
°C
A
V
A
V
°C
°C
Description/ Features
This Schottky rectifier has been optimized for low reverse leakage
at high temperature
The proprietary barrier technology allows for reliable operation up
to 175°C junction temperature. Typical applications are in
switching power supplies, converters, reverse battery protection,
and redundant power subsystems.
175°C TJ operation
High Frequency Operation
Low forward voltage drop
Continuous High Current operation
Guard ring for enhanced ruggedness and long term
reliability
PowIRtabTM package
www.DataS100BGQ100
Case Styles
100BGQ100J
www.irf.com
www.DataShee1 t4U.com
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Pages | Pages 6 | ||
Télécharger | [ 100BGQ100 ] |
No | Description détaillée | Fabricant |
100BGQ100 | Schottky Rectifier ( Diode ) | International Rectifier |
100BGQ100J | Schottky Rectifier ( Diode ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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