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PDF K3407 Data sheet ( Hoja de datos )
| Número de pieza | K3407 | |
| Descripción | MOSFET ( Transistor ) - 2SK3407 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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2SK3407
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3407
Switching Regulator Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.)
· High forward transfer admittance: |Yfs| = 7.5 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
· Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
450
450
±30
10
40
40
222
10
4
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 W, IAR = 10 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-08-12
1 page  
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2SK3407
rth – tw
10
5
3
1
Duty = 0.5
0.5
0.3 0.2
0.1
0.05
0.03
0.1
0.05
0.02
0.01 0.01
0.005
0.003
0.001
10 m
Single pulse
100 m
1m
10 m
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.125°C/W
100 m
1
10
Safe operating area
100
Pulse width tw (S)
400
EAS – Tch
ID max (pulse) *
ID max
(continuous)
10
100 ms *
1 ms *
300
200
1 DC operation
Tc = 25°C
0.1
0.01
1
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
10
VDSS max
100
Drain-source voltage VDS (V)
1000
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
-15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 W
VDD = 90 V, L = 3.7 mH
Wave form
ΕAS
=
1
2
×L
×I2
×
ççèæ
BVDSS
BVDSS - VDD
÷÷øö
5 2002-08-12
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3407.PDF ] | |
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