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Número de pieza | VP0645 | |
Descripción | (VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs | |
Fabricantes | Supertex | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de VP0645 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Ordewri.nDgatInafSohrmeeatt4ioUn.comPVe-Crth–icaanlOnDeMl BEOnShSFanEOcTesmLenEt-MTodEe –VVPP00664550BVDSS /
wBVDGS
w -450V
m-500V
RDS(ON)
(max)
30Ω
30Ω
o† MIL visual screening available
ID(ON)
(min)
-0.2A
-0.2A
TO-39
VP0645N2
—
Order Number / Package
TO-92
—
VP0650N3
TO-220
—
VP0650N5
Die†
VP0645ND
VP0650ND
Advanced DM.OcS TechnologyHigh Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
UFlows and Ordering Information.
Features et4■ Free from secondary breakdown
e■ Low power drive requirement
h■ Ease of paralleling
■
Low C and fast switching speeds
ISS
S■ Excellent thermal stability
ta■ Integral Source-Drain diode
■ High input impedance and high gain
a■ Complementary N- and P-channel devices
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications .D Package Options■ Motor controls
w■ Converters
w■ Amplifiers
■ Switches
w om■ Power supply circuits
.c■ Drivers (relays, hammers, solenoids, lamps, memories,
Udisplays, bipolar transistors, etc.)
Absolute Maximum Ratings Sheet4Drain-to-Source Voltage
taDrain-to-Gate Voltage
aGate-to-Source Voltage
.DOperating and Storage Temperature
wSoldering Temperature*
ww* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 20V
-55°C to +150°C
300°C
G DS
TO-220
TAB: DRAIN
DGS
TO-39
Case: DRAIN
SGD
TO-92
Note: See Package Outline section for dimensions.
7-245
7
9
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet VP0645.PDF ] |
Número de pieza | Descripción | Fabricantes |
VP0645 | (VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs | Supertex |
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