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FDM606P fiches techniques PDF

Fairchild Semiconductor - P-Channel 1.8V Logic Level Power Trench MOSFET

Numéro de référence FDM606P
Description P-Channel 1.8V Logic Level Power Trench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDM606P fiche technique
July 2002
FDM606P
P-Channel 1.8V Logic Level Power Trench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
Applications
• Load switch
• Battery charge
• Battery disconnect circuits
Features
• Fast switching
• rDS(ON) = 0.026(Typ), VGS = -4.5V
• rDS(ON) = 0.033(Typ), VGS = -2.5V
• rDS(ON) = 0.052(Typ), VGS = -1.8V
Bottomview 3 X 2 (8 Lead)
SinglePad
ShortPin
S
D
D
D
D
G
1
MicroFET 3x2-8
D
D
D
S
MOSFET Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = - 4.5V)
Continuous (TC = 100oC, VGS = - 2.5V)
Continuous (TC = 100oC, VGS = -1.8V)
Pulsed
PD
Power dissipation
Derate above 25°C
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case (Note1)
Thermal Resistance Junction to Ambient (Note 2)
Package Marking and Ordering Information
Device Marking
.06P
Device
FDM606P
Package
MicroFET3x2
Reel Size
178 mm
18
27
36
45
Ratings
-20
±8
-6.8
-3.8
-3.0
Figure 4
1.92
15.4
-55 to 150
Units
V
V
A
A
A
W
mW/oC
oC
6.0 oC/W
65 oC/W
Tape Width
8 mm
Quantity
3000
©2002 Fairchild Semiconductor Corporation
FDM606P Rev. C

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