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Fuji Semiconductors - MOSFET ( Transistor ) - 2SK2769

Numéro de référence K2769
Description MOSFET ( Transistor ) - 2SK2769
Fabricant Fuji Semiconductors 
Logo Fuji Semiconductors 





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K2769 fiche technique
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2SK2769-01MR
FAP-IIS Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
900V 5,5Ω 3,5A 40W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
900
Continous Drain Current
I D 3,5
Pulsed Drain Current
I D(puls)
14
Gate-Source-Voltage
V GS
±30
Repetitive or Non-Repetitive (Tch 150°C)
Avalanche Energy
I AR
E AS
3,5
111
Max. Power Dissipation
P D 40
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
A
A
V
A
mJ
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=900V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=2A
VGS=10V
Forward Transconductance
g fs ID=2A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=600V
t r ID=7A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10
I AV L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
900
3,5
3,5
Typ. Max.
4,0 4,5
10 500
0,2 1,0
10 100
4 5,5
2
450
75
40
20
40
50
25
1
500
3
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
62,5 °C/W
3,125 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98

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