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PDF FLU35ZM Data sheet ( Hoja de datos )
| Número de pieza | FLU35ZM | |
| Descripción | L-Band Medium & High Power GaAs FET | |
| Fabricantes | ETC | |
| Logotipo |  |
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FLU35ZM
FEATURES
・High Output Power: P1dB=35.5dBm(typ.)
・High Gain: G1dB=11.5dB(typ.)
・Low Cost Plastic(SMT) Package
・Tape and Reel Available
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU35ZM is a GaAs FET designed for base station and CPE
application up to a 4.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC)
Item
Drain-Source Voltage
Symbol
VDS
Rating
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PT
20.8
Storage Temperature Tstg -55 to +150
Channel Temperature
Tch
175
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC)
Item
Symbol
Condition
DC Input Voltage
Channel Temperature
VDS
Tch
≤10
≤ 145
Forward Gate Current
Igsf
≤19.4
Reverse Gate Current
Igsr
≥-2.0
Gate Resistance Rg 100
Unit
V
oC
mA
mA
Ω
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Drain Current
Transconductance
Pinch-off Voltage
Symbol
IDSS
gm
Vp
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=800mA
VDS=5V, IDS=60mA
Min.
-
-
-1.0
Gate-Source Breakdown
Voltage
VGSO
IGS=-60uA
-5
Limit
Typ.
1200
600
-2.0
-
Max.
1800
-
-3.5
-
Unit
mA
mS
V
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS=10V
f=2.0GHz
IDS=0.6IDSS(Typ.)
34.5
10.5
35.5
11.5
- dBm
- dB
Thermal Resistance
Rth Channel to Case
- 5 6 oC /W
CASE STYLE: ZM
G.C.P.:Gain Compression Point
Note1: Product supplied to this specification are 100% DC performance tested.
Note2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class Ⅲ
2000 V～
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kΩ)
Edition 1.2
Jan 2004
1
1 page  
FLU35ZM
L-Band Medium & High Power GaAs FET
@ VDS=10V, IDS(DC)=0.6IDSS
IMD vs OUTPUT POWER(2-tone)
0
-10
-20
-30
-40
-50
-60
-70
-80
15
20 25 30
2-tone to tal Pout [dBm ] @ df=+5M Hz
35
IM 3@ 1.8GHz
IM 5@ 2.0GHz
IM 5@ 1.8GHz
IM 3@ 2.2GHz
IM 3@ 2.0GHz
IM 5@ 2.2GHz
W-CDMA 2-CARRIER IMD(ACLR)
-25
-30
-35
-40
-45
-50
-55
-60
17
*fo=2.1325GHz *f1=2.1475GHz
19 21 23 25 27 29
2-ton e total Pou t [dBm ]
31
IM 3-L
IM 3-U
IM 5-L
IM 5-U
W-CDMA SINGLE CARRIER ACLR
*f o =2.1325GHz
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
23 24 25 26 27 28 29 30 31 32
Output Pow e r [dBm ]
-5M Hz
+5M Hz
-10M Hz
+10M Hz
W-CDMA SINGLE CARRIER CCDF AND GAIN
15
14
13
12
11
10
9
8
7
6
5
18
*f o =2.1325GHz
23 28
Output Pow e r [dBm ]
0.01%
Pe ak
Gain
Note : *All signal are W-CDMA modulation at 3GPP3.4.12-00 BS-1 64ch non clipping.
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FLU35ZM.PDF ] | |
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