|
|
Numéro de référence | 11E2 | ||
Description | DIODE | ||
Fabricant | Nihon Inter Electronics | ||
Logo | |||
1 Page
DIODE Type : 11E2
FEATURES
* Miniature Size
* Low Forward Voltage drop
* Low Reverse Leakage Current
* High Surge Capability
* 26mm and 52mm Inside Tape Spacing Package
Available
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.21g
Rating
Symbol
11E2
Unit
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
VRRM
VRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
200
400
1.0
Ta=40°C
50Hz Half Sine
Wave Resistive Load
1.57
45
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
V
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM Tj= 25°C, VRM= VRRM
VFM Tj= 25°C, IFM= 1.0A
Rth(j-a) Junction to Ambient
Min. Typ. Max.
- - 50
- - 1.0
- - 120
Unit
µA
V
°C/W
|
|||
Pages | Pages 2 | ||
Télécharger | [ 11E2 ] |
No | Description détaillée | Fabricant |
11E1 | DIODE | Nihon Inter Electronics |
11E2 | DIODE | Nihon Inter Electronics |
11EFS2 | Low Forward Voltage drop Diode | Nihon Inter Electronics |
11EFS4 | Low Forward Voltage drop Diode | Nihon Inter Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |