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11EQ10 fiches techniques PDF

Nihon Inter Electronics - Low Forward Voltage drop Diode

Numéro de référence 11EQ10
Description Low Forward Voltage drop Diode
Fabricant Nihon Inter Electronics 
Logo Nihon Inter Electronics 





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11EQ10 fiche technique
SBD Type :11EQ10
OFUETLAITNUERDERSAWING
* Miniature Size
* Low Forward Voltage drop
* Low Power Loss, High Efficiency
* High Surge Capability
* 40 Volts thru 100 Volts Types Available
* 26mm&52mm Inside Tape Spacing Package Available
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.21g
Rating
Symbol
11EQ10
Unit
Repetitive Peak Reverse Voltage
Without Fin or
Average Rectified P.C.Board
Output Current P.C.Board
mounted
RMS Forward Current
VRRM
IO
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range Tjw
Storage Temperature Range
Tstg
Electrical Thermal Characteristics
100
1.0
Ta=26°C*
50Hz Half Sine
1.0
Ta=57°C*
Wave Resistive Load
1.57
40
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
V
A
A
A
°C
°C
Characteristics
Symbol
Conditions
Min. Typ. Max.
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance (Junction to Ambient)
*:Print Lands=5x5mm,Both Sides
IRM
VFM
Rth(j-a)
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 1.0A
Without Fin or P.C.Board
P.C.Board mounted
-
-
-
- 0.5
- 0.85
-
140
105
Unit
mA
V
°C/W

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