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Numéro de référence | 11EQS06 | ||
Description | Low Forward Voltage drop Diode | ||
Fabricant | Nihon Inter Electronics | ||
Logo | |||
1 Page
SBD Type :11EQS06
FEATURES
* Miniature Size
* Low Forward Voltage Drop
* High Surge Capability
* 30volts trough 100volts Types Available
* 26mm and 52mm Inside Tape Spacing Package Available
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.17g
Rating
Symbol
11EQS06
Unit
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Without Fin or
Average Rectified P.C.Board
Output Current P.C.Board
Mounted *
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
VRRM
VRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
60 V
65 V
0.8 Ta=28°C
Half Sine Wave Resistive Load
1.0 Ta=29°C
A
1.57
25 Half Sine Wave,1cycle,Non-repetitive
- 40 to + 150
- 40 to + 150
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Symbol
Conditions
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance(Junction to Ambient)
* :Print Lands = 5x5 mm,Both Sides
IRM Tj= 25°C, VRM= VRRM
VFM Tj= 25°C, IFM= 1 A
Rth(j-a)
Without Fin or P.C.Board
P.C.Board mounted *
Min Typ
--
--
--
Max
1
0.58
140
110
Unit
mA
V
°C/W
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Pages | Pages 2 | ||
Télécharger | [ 11EQS06 ] |
No | Description détaillée | Fabricant |
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