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Numéro de référence | HY27UG164GDM | ||
Description | (HY27UGxx Series) 2G-Bit NAND Flash | ||
Fabricant | Hynix Semiconductor | ||
Logo | |||
om Preliminary
.c HY27UG(08/16)4G(2/D)M Series
t4U 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash
heeDocument Title
S4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory
.DataRevision History
wwRevision
w No.
History
Draft Date
Remark
0.0 Initial Draft.
m1) Add Errata
tWH
o0.1
Specification
15
.cRelaxed value
20
tWP
25
35
tWC
50
60
May. 13. 2005 Preliminary
May. 23. 2005 Preliminary
U1) Correct the Valid Blocks Number.
Valid Blocks (max)
t40.2 Before
4,098
eAfter
4,096
Jun. 13. 2005 Preliminary
e1) Add tRSBY (Table 11)
- tRSBY (Dummy Busy Time for Cache Read)
h0.3 - tRSBY is 5us (typ.)
JUn. 14. 2005 Preliminary
S2) Edit Figure 18, 19
3) Correct Extended Read Status Register Commands (Table. 19)
ta1) Add ULGA Package.
- Figures & texts are added.
a2) Correct the test Conditions (DC Characteristics table)
.DTest Conditions (ILI, ILO)
Before VIN=VOUT=0 to 3.6V
w0.4 After VIN=VOUT=0 to Vcc (max)
Sep. 02. 2005 Preliminary
3) Change AC Conditions table
w4) Add tWW parameter ( tWW = 100ns, min)
w- Texts & Figures are added.
- tWW is added in AC timing characteristics table.
5) Edit System Interface Using CE don’t care Figures.
6) Correct Address Cycle Map.
Rev 0.5 / Oct. 2005
www.DataSheet4U.1com
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Pages | Pages 30 | ||
Télécharger | [ HY27UG164GDM ] |
No | Description détaillée | Fabricant |
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