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PDF MBD770DWT1 Data sheet ( Hoja de datos )
| Número de pieza | MBD770DWT1 | |
| Descripción | (MBDxx0DWT1) Dual Schottky Barrier Diodes | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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ON Semiconductort
Dual Schottky Barrier Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT–363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small
six–leaded package. The SOT–363 is ideal for low–power surface
mount applications where board space is at a premium, such as
portable products.
Surface Mount Comparisons:
Area (mm2)
Max Package PD (mW)
Device Count
SOT–363
4.6
120
2
SOT–23
7.6
225
1
Space Savings:
Package
SOT–363
1 SOT–23
40%
2 SOT–23
70%
The MBD110DW, MBD330DW, and MBD770DW devices are
spin–offs of our popular MMBD101LT1, MMBD301LT1, and
MMBD701LT1 SOT–23 devices. They are designed for
high–efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
MBD110DWT1
MBD330DWT1
MBD770DWT1
ON Semiconductor Preferred Devices
6 54
123
CASE 419B–01, STYLE 6
SOT–363
Anode 1
N/C 2
Cathode 3
6 Cathode
5 N/C
4 Anode
MAXIMUM RATINGS
Reverse Voltage
Rating
Forward Power Dissipation
TA = 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MBD110DWT1 = M4
MBD330DWT1 = T4
MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
MBD110DWT1
MBD330DWT1
MBD770DWT1
Symbol
VR
PF
TJ
Tstg
Value
7.0
30
70
120
–55 to +125
–55 to +150
Unit
Vdc
mW
°C
°C
© Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev.3
1
Publication Order Number:
MBD110DWT1/D
1 page  
MBD110DWT1 MBD330DWT1 MBD770DWT1
2.0
MBD770DWT1
1.6
1.2
TYPICAL CHARACTERISTICS
MBD770DWT1
f = 1.0 MHz
500
MBD770DWT1
400
KRAKAUER METHOD
300
0.8 200
0.4 100
0
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 11. Minority Carrier Lifetime
10
MBD770DWT1
1.0 TA = 100°C
TA = 75°C
0.1
0.01
0.001
0
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Reverse Leakage
100
MBD770DWT1
10
TA = 85°C
TA = -ā40°C
1.0
TA = 25°C
0.1
50 0.2 0.4 0.8 1.2 1.6
VF, FORWARD VOLTAGE (VOLTS)
Figure 13. Forward Voltage
2.0
http://onsemi.com
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MBD770DWT1.PDF ] | |
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