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Numéro de référence | H20T120 | ||
Description | IHW20T120 | ||
Fabricant | Infineon | ||
Logo | |||
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Soft Switching Series
IHW20T120
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Short circuit withstand time – 10µs
• Designed for :
- Soft Switching Applications
- Induction Heating
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Very soft, fast recovery anti-parallel EmCon™ HE diode
• Low EMI
• Application specific optimisation of inverse diode
C
G
E
Type
IHW20T120
VCE
1200V
IC
20A
VCE(sat),Tj=25°C
1.7V
Tj,max
150°C
Marking
H20T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
tSC
Ptot
Tj
Tstg
-
Package Ordering Code
TO-247AC Q67040-S4652
Value
1200
40
20
60
60
Unit
V
A
23
13
36
50
130
120
±20
10
178
-40...+150
-55...+150
260
A
V
µs
W
°C
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2
Apr-04
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Pages | Pages 14 | ||
Télécharger | [ H20T120 ] |
No | Description détaillée | Fabricant |
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