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PDF FLM5964-35F Data sheet ( Hoja de datos )
| Número de pieza | FLM5964-35F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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t4U.com FLM5964-35FFEATURES
e・High Output Power: P1dB=45.5dBm(Typ.)
e・High Gain: G1dB=9.0dB(Typ.)
h・High PAE: ηadd=36%(Typ.)
S・Broad Band: 5.9~6.4GHz
ta・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
C-Band Internally Matched FET
.DaDESCRIPTION
The FLM5964-35F is a power GaAs FET that is internally matched
ww mfor standard communication bands to provide optimum power and
gain in a 50Ω system.
w .coABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC)
Ite m
Symbol
Rating
Drain-Source Voltage
UGate-Source Voltage
t4Total Power Dissipation
Storage Tem perature
Channel Tem perature
VDS
VGS
PT
Ts t g
Tch
15
-5
115
-65 to +175
175
Unit
V
V
W
oC
oC
eRECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC)
eItem
Sym bol
Condition
Lim it
hDC Input Voltage
Forw ard Gate Current
SReverse Gate Current
VDS
IGF RG=10Ω
IGR RG=10Ω
≤10
≤108
≥-23.2
Unit
V
mA
mA
taELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Ite m
Sym bol
Condition
aDrain Current
.DTransconductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
IDSS
gm
Vp
VGSO
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=480mA
IGS=-480uA
Output Pow er at 1dB G.C.P.
P1dB VDS=10V
w mPower Gain at 1dB G.C.P.
G1d B
f=5.9 - 6.4 GHz
oDrain Current
Idsr IDS(DC)=8.0A(typ.)
w .cPower-added Efficiency
ηadd Zs=ZL=50 ohm
Gain Flatness
w t4U3rd Order Intermodulation
eDistortion
∆G
f=6.4 GHz
IM3 ∆ f=10MHz, 2-tone Test
Pout=35.0dBm(S.C.L.)
eThermal Resistance
hChannel Tem perature Rise
Rt h
∆ Tch
Channel to Case
10V x IDS(DC) X Rth
taSCASE STYLE : IK
ESD Class III 2000V ~
aNote : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
M in.
-
-
-0.5
-5.0
45.0
8.0
-
-
-
-38
-
-
Lim it
Typ.
16
16
-1.5
-
45.5
9.0
8.5
36
-
Max.
-
-
-3.0
-
-
-
9.5
-
1.2
Unit
A
S
V
V
dBm
dB
A
%
dB
-40 -
dBc
1.1 1.3
oC/W
- 100
oC
G.C.P.:Gain Compression Point
ww.DEdition 1.3
wSeptember 2004
1
1 page  
FLM5964-35F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
5
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| PDF Descargar | [ Datasheet FLM5964-35F.PDF ] | |
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