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Numéro de référence | CD9018 | ||
Description | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | ||
Fabricant | CDIL | ||
Logo | |||
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CD9018
TO-92
Plastic Package
EBC
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
VALUE
15
30
5
30
400
125
- 55 to +125
UNITS
V
V
V
mA
mW
ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX
Collector Emitter Voltage
VCEO
IC=3mA, IB=0
15
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
VCBO
VEBO
ICBO
IC=10µA, IE=0
IE=10µA, IC=0
VCB=15V, IE = 0
30
5
50
Emitter Cut Off Current
IEBO
VEB=3V, IC = 0
100
DC Current Gain
hFE VCE=5V, IC=1mA 29
273
Collector Emitter Saturation Voltage VCE (sat)
IC=10mA, IB=1mA
0.5
UNITS
V
V
V
nA
nA
V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Output Capacitance
Transition Frequency
Noise Figure
SYMBOL TEST CONDITION
Cob VCB=10V, IE=0,f=1MHz
fT
VCE=10V, IC=5mA,
f=100MHz
NF VCE=10V, IC=1mA,
f=60MHz
MIN
600
TYP
MAX
1.7
5.0
UNITS
pF
MHz
dB
hFE Rank Classfication
Rank
D
hFE 29 - 44
E
40 - 59
F
54 - 80
G
72 - 108
H
97- 146
IJ
132 - 198 182 - 273
CD9018Rev_3 170403E
Continental Device India Limited
Data Sheet
Page 1 of 4
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Pages | Pages 4 | ||
Télécharger | [ CD9018 ] |
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