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TriQuint Semiconductor - 2-Stage Bluetooth InGaP HBT Power Amplifier

Numéro de référence CGB240
Description 2-Stage Bluetooth InGaP HBT Power Amplifier
Fabricant TriQuint Semiconductor 
Logo TriQuint Semiconductor 





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CGB240 fiche technique
CGB 240
Datasheet
2-Stage Bluetooth InGaP HBT Power Amplifier
Description:
Applications:
The CGB240 GaAs Power Amplifier MMIC has been
especially developed for wireless applications in the
2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1). Its
high power added efficiency and single positive sup-
ply operation makes the device ideally suited to
handheld applications. The device delivers 23 dBm
output power at a supply voltage of 3.2 V, with an
overall PAE of 50%. The output power can be ad-
justed using an analog control voltage (VCTR). Simple
external input-, interstage-, and output matching cir-
cuits are used to adapt to the different requirements
of linearity and harmonic suppression in various ap-
plications.
For WLAN applications (IEEE802.11b) or appli-
cations serving both WLAN and Bluetooth, we
recommend to use the CGB240B device.
Bluetooth Class 1
Cordless Phones
Home RF
Features:
Single voltage supply.
Wide operating voltage range 2.0 - 5.5 V.
POUT = 23 dBm at VC = 3.2 V.
Overall power added efficiency (PAE) typi-
cally 50%.
High PAE at low–power mode.
Analog power control with four power
steps.
Straight-Forward Matching; Few external
components.
Package Outline:
1
5
TSMSOSPO-P1-01-02
Pin Configuration:
1 & 2:
3:
4, 5, & 10:
6:
7:
8 & 9:
11 (Paddle):
Vc1
RF In
NC
Vcntrl1
Vcntrl2
Vc2
GND
For further information please visit www.triquint.com
Rev. 1.6 October 20th, 2004
pg. 2/13

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