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Numéro de référence | IRLL024Z | ||
Description | AUTOMOTIVE MOSFET | ||
Fabricant | International Rectifier | ||
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1 Page
AUTOMOTIVE MOSFET
PD - 95886A
IRLL024Z
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 60mΩ
S ID = 5.0A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 150°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an ex-
tremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
iContinuous Drain Current, VGS @ 10V (Silicon Limited)
iContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
iPower Dissipation
jPower Dissipation
iLinear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
iRθJA Junction-to-Ambient (PCB mount, steady state)
jRθJA Junction-to-Ambient (PCB mount, steady state)
www.irf.com
Max.
5.0
4.0
40
2.8
1.0
0.02
± 16
21
38
See Fig.12a, 12b, 15, 16
-55 to + 150
Typ.
–––
–––
Max.
45
120
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
08/03/04
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Pages | Pages 10 | ||
Télécharger | [ IRLL024Z ] |
No | Description détaillée | Fabricant |
IRLL024N | HEXFET Power MOSFET | International Rectifier |
IRLL024NPBF | Power MOSFET ( Transistor ) | International Rectifier |
IRLL024NQ | Power MOSFET ( Transistor ) | International Rectifier |
IRLL024Z | AUTOMOTIVE MOSFET | International Rectifier |
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