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PDF DS1213B Data sheet ( Hoja de datos )
| Número de pieza | DS1213B | |
| Descripción | SmartSocket 16k/64k | |
| Fabricantes | Dallas Semiconducotr | |
| Logotipo |  |
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DS1213B
SmartSocket 16k/64k
www.dalsemi.com
FEATURES
Accepts standard 2K x 8 or 8K x 8 CMOS
static RAMs
Embedded lithium energy cell retains RAM
data
Self-contained circuitry safeguards data
Data retention time is greater than 10 years
with proper RAM selection
IC socket permits upgrading from 2K x 8 to
8K RAM
Proven gas-tight socket contacts
Operating temperature range 0°C to 70°C
PIN ASSIGNMENT
1 28 VCC
2 27
3 26 VCC
4 25
5 24
6 23
7 22
8 21
9 20 CE
10 19
11 18
12 17
13 16
GND 14
15
28-Pin Intelligent Socket
PIN DESCRIPTION
CE - Conditioned Chip Enable
VCC
GND
- Switched VCC
- Ground
All pins pass through except 20, 26 and 28.
DESCRIPTION
The DS1213B SmartSocket is a 28-pin, 600 mil DIP socket with a built-in CMOS controller circuit and
an embedded lithium energy source. It accepts either 24-pin 2K x 8 (lower-justified) or 28-pin 8K x 8
JEDEC bytewide CMOS static RAM. When the socket is mated with a CMOS RAM, it provides a
complete solution to problems associated with memory volatility. The Smart-Socket monitors incoming
VCC for an out-of-tolerance condition. When such a condition occurs, the internal lithium energy source is
automatically switched on and write protection is unconditionally enabled to prevent data corruption.
Using the SmartSocket saves printed circuit board space since the SRAM/SmartSocket combination
occupies no more area than the SRAM alone. The SmartSocket modifies only pins 20, 26 and 28, to
nonvolatize the RAM. All other pins are passed straight through.
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TIMING DIAGRAM: POWER-UP
DS1213B
WARNINGS:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
Water washing for flux removal will discharge internal lithium source because exposed voltage pins
are present.
NOTES:
1. All voltages are referenced to ground.
2. Measured with a load as shown in Figure 1.
3. Pin locations are designated “U” (for upper) when a parameter definition refers to the socket
receptacle and “L” (for lower) when a parameter definition refers to the socket pin.
4. No memory inserted in the socket.
5. Pin 26 L may be connected to VCC or left disconnected at the PC board.
6. IBAT is the maximum load current which a correctly installed memory can use in the data retention
mode and meet data retention expectations of more than 10 years at 25°C.
7. tCE max. must be met to ensure data integrity on power loss.
8. VCC is within nominal limits and a memory is installed in the socket.
9. Input pulse rise and fall times equal 10 ns.
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DS1213B.PDF ] | |
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