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PDF HAT3004R Data sheet ( Hoja de datos )
| Número de pieza | HAT3004R | |
| Descripción | Silicon N-Channel / P-Channel Power MOSFET | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAT3004R (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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UH.cAomT3004RSilicon N Channel / P Channel Power MOS FET
t4High Speed Power Switching
ww.DataShee omFeatures
w .c• Low on-resistance
• Capable of 4 V gate drive
U• Low drive current
• High density mounting
t4Outline
ADE-208-500I (Z)
10th. Edition
Aug. 1997
eeSOP–8
taSh7 8
aD D
8 7 65
1 234
56
DD
.D2 4
GG
w .comS1 S 3
ww www.DataSheet4UNch Pch
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
1 page  
Main Characteristics (N channel)
Maximum Safe Operation Area
100
10 µs
30
10
3
1
0.3
100 µs
OtlhimpiseitraeardteiaobnyDisCiRnODpeSr(aotino)nPW(PW= 1<101mm0sNsso)te5
0.1
Ta = 25°C
0.03 1 shot Pulse
0.01 1 Drive Operation
0.1 0.3 1 3 10 30
Drain to Source Voltage V DS(V)
100
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
HAT3004R
Typical Output Characteristics
10V 8 V
20
6V 5V
Pulse Test
16
4.5 V
12 4 V
8 3.5 V
4 3V
VGS = 2.5 V
0 2 4 6 8 10
Drain to Source Voltage V DS(V)
Typical Transfer Characteristics
20
25°C
16
Tc = 75°C
–25°C
12
8
4
VDS = 10 V
Pulse Test
0 Gate t2o Source4Voltage6 V G8(SV) 10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3 I D = 5 A
0.2
2A
0.1
1A
0 2 4 6 8 10
Gate to Source Voltage V G(SV)
5
5 Page 
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0 1 Drive Operation
0 50 100 150 200
Ambient Temperature Ta (°C)
HAT3004R
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet HAT3004R.PDF ] | |
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