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PDF DRDNS26W Data sheet ( Hoja de datos )
| Número de pieza | DRDNS26W | |
| Descripción | (DRD xxxx W) Complex Array for Relay Drivers | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DRDNS26W (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SPICE MODELS: DRDPB26W DRDN005W DRDN010W DRDNB16W DRDNB26W DRDP006W DRDPB16W
t4U.com DRD (xxxx) WFeatures
e• Epitaxial Planar Die Construction
e• One Transistor and One Switching
hDiode in One Package
S• Lead Free By Design/RoHS Compliant (Note 1)
ta• "Green" Device (Note 2)
.DaMechanical Data
w• Case: SOT-363
w• Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
w• Moisture sensitivity: Level 1 per J-STD-020C
m• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
oleadframe. Solderable per MIL-STD-202, Method 208
.c• Marking & Type Code Information: See Last
Page
• Ordering Information: See Last Page
U• Weight: 0.008 grams (approx.)
Lead-free Green COMPLEX ARRAY FOR RELAY DRIVERS
A
BC
G
H
K
J
D
L
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
M
J 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α 0° 8°
All Dimensions in mm
t4P/N
eDRDNB16W
DRDPB16W
eDRDNB26W
hDRDPB26W
R1 (NOM) R2 (NOM)
1K 10K
1K 10K
220 4.7K
220 4.7K
DRDN010W/
DRDN005W
DRDP006W
SMaximum Ratings, Total Device @ TA = 25°C unless otherwise specified
R2
R1
DRDNB16W/
DRDNB26W
taCharacteristic
Power Dissipation (Note 3)
aThermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage and Temperature Range
Symbol
Pd
RθJA
Tj, TSTG
Value
200
625
-55 to +150
R2
R1
DRDPB16W/
DRDPB26W
Unit
mW
°C/W
°C
.DMaximum Ratings, DRDN010W NPN Transistor @ TA = 25°C unless otherwise specified
wCharacteristic
Collector-Base Voltage
wCollector-Emitter Voltage
mEmitter-Base Voltage
w oCollector Current (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Value
45
18
5
1000
U.cMaximum Ratings, DRDN005W NPN Transistor @ TA = 25°C unless otherwise specified
et4Characteristic
eCollector-Base Voltage
hCollector-Emitter Voltage
SEmitter-Base Voltage
taCollector Current - Continuous (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Value
80
80
4.0
500
www.DaNotes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http: //www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Unit
V
V
V
mA
Unit
V
V
V
mA
DS30573 Rev. 8 - 2
1 of 9
DRD (xxxx) W
www.diodes.com
© Diodes Incorporated
1 page  
Device Characteristics
250 1000
200
150
100
100
50
0
0 100 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve (Total Device)
100
f = 1MHz
1
0.0001
VCE = 1.0V
.001 .01
.1
1
IC, COLLECTOR CURRENT (A)
Fig. 2, Typical DC Current Gain vs
Collector Current (DRDN010W)
10
1000
10
1
0.1 1
10 100
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 3, Output Capacitance vs.
Collector-Base Voltage (DRDN010W)
100
10
1
0.0001
.001 .01
.1
1
IC, COLLECTOR CURRENT (A)
Fig. 4, Collector Saturation Voltage vs
Collector Current (DRDN010W)
10
DS30573 Rev. 8 - 2
5 of 9
www.diodes.com
DRD (xxxx) W
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet DRDNS26W.PDF ] | |
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