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PDF FLM5359-45F Data sheet ( Hoja de datos )
| Número de pieza | FLM5359-45F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | ETC | |
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FEATURES
・High Output Power: P1dB=46.5dBm(Typ.)
・High Gain: G1dB=8.5dB(Typ.)
・High PAE: ηadd=36%(Typ.)
・Broad Band: 5.3~5.9GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
FLM5359-45F
C-Band Internally Matched FET
DESCRIPTION
The FLM5359-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC)
Ite m
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Pow er Dissipation
Storage Tem perature
Channel Tem perature
VDS
VGS
PT
Ts tg
Tch
15
-5
115.4
-65 to +175
175
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)
Ite m
Sym bol
Condition
Lim it
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
VDS
IGF RG=13 ohm
IGR RG=13 ohm
≤12
≤107.2
≥-23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Ite m
Sym bol
Condition
Drain Current
Tr ans conductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
Therm al Resistance
Channel Tem perature Rise
IDSS
gm
Vp
VGSO
P1d B
G1d B
Id s r
Nad d
∆G
Rt h
∆ Tch
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=960mA
IGS=-960uA
VDS=12V
IDS(DC)=8.0A (typ.)
f= 5.3 ~ 5.9 GHz
Zs=ZL=50 ohm
Channel to Case
12V x IDS(DC) X Rth
CASE STYLE : IK
ESD Class III 2000V ~
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kΩ)
M in.
-
-
-1.0
-5.0
46.0
7.5
-
-
-
-
-
Lim it
Typ. Max.
Unit
16.0 -
A
8000
-
mS
-2.0 -3.5
V
--
V
46.5 -
dBm
8.5 -
dB
8.5 10.0
A
36 -
%
- 1.4
dB
0.8 1.0
oC/W
- 100
oC
G.C.P.: Gain Compression Point
Edition 1.2
September 2004
1
1 page  
FLM5359-45F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
5
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