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PDF FLM7785-18F Data sheet ( Hoja de datos )
| Número de pieza | FLM7785-18F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | ETC | |
| Logotipo |  |
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FLM7785-18F
C-Band Internally Matched FET
FEATURES
• High Output Power: P1dB = 42.5dBm (Typ.)
• High Gain: G1dB = 7.0dB (Typ.)
• High PAE: ηadd = 29% (Typ.)
• Low IM3 = -45dBc@Po = 31.5dBm
• Broad Band: 7.7 ~ 8.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM7785-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
83.3 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 18.0 and -8.4 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
Transconductance
Pinch-off Voltage
IDSS
gm
Vp
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 5100mA
VDS = 5V, IDS = 450mA
-
-
-1.0
8.1 12.75
4350 -
-2.0 -3.5
A
mS
V
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
VGSO
P1dB
G1dB
Idsr
ηadd
IGS = -450µA
VDS = 10V,
IDS = 0.55 IDSS (Typ.),
f = 7.7 ~ 8.5 GHz,
ZS=ZL= 50 ohm
-5 - -
41.5 42.5
6.0 7.0
-
-
- 4700 5800
- 29 -
V
dBm
dB
mA
%
Gain Flatness
∆G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
f = 8.5 GHz, ∆f = 10 MHz
IM3 2-Tone Test
Pout = 31.5dBm S.C.L.
-42 -45 -
dBc
Thermal Resistance
Rth Channel to Case
- 1.6 1.8
°C/W
Channel Temperature Rise
CASE STYLE: IK
∆Tch
10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLM7785-18F.PDF ] | |
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