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FLM8596-8F fiches techniques PDF

ETC - Ku-Band Internally Matched FET

Numéro de référence FLM8596-8F
Description Ku-Band Internally Matched FET
Fabricant ETC 
Logo ETC 





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FLM8596-8F fiche technique
FLM8596-8F
FEATURES
X, Ku-Band Internally Matched FET
• High Output Power: P1dB = 39.0dBm (Typ.)
• High Gain: G1dB = 7.5dB (Typ.)
• High PAE: ηadd = 29% (Typ.)
• Low IM3 = -45dBc@Po = 29.5dBm
• Broad Band: 8.5 ~ 9.6GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed
DESCRIPTION
The FLM8596-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudynas stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15 V
-5 V
Total Power Dissipation
PT Tc = 25°C
42.8 W
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100.
-65 to +175
175
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 2200mA
-
-
3400 5200
3400 -
mA
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 170mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
VGSO
P1dB
G1dB
Idsr
ηadd
G
IGS = -170µA
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 8.5 ~ 9.6 GHz,
ZS=ZL= 50 ohm
-5.0 -
-
38.5 39.0 -
6.5 7.5 -
- 2200 2600
- 29 -
- - ±0.6
V
dBm
dB
mA
%
dB
3rd Order Intermodulation
Distortion
f = 9.6 GHz, f = 10 MHz
IM3 2-Tone Test
Pout = 28.5dBm S.C.L.
-42 -45
-
dBc
Thermal Resistance
Rth Channel to Case
- 3.0 3.5
°C/W
Channel Temperature Rise
CASE STYLE: IB
Tch
10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
1

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