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PDF FM640-T Data sheet ( Hoja de datos )
| Número de pieza | FM640-T | |
| Descripción | (FM620-T - FM6100-T) Chip Schottky Barrier Diodes - Silicon epitaxial planer type | |
| Fabricantes | Formosa MS | |
| Logotipo |  |
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Chip Schottky Barrier Diodes
FM620-T THRU FM6100-T
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
0.040(1.0) Typ.
Formosa MS
SMC-T
0.276(7.0)
0.260(6.6)
0.244(6.2)
0.228(5.8)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gr am
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25oC
VR = VRRM TA = 125oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
MIN.
IFSM
IR
RqJA
CJ
TSTG
-55
TYP.
15
380
MAX.
6.0
UNIT
A
150 A
0.5
50
+150
mA
mA
oC / w
pF
oC
SYMBOLS
FM620-T
FM630-T
FM640-T
FM650-T
FM660-T
FM680-T
FM6100-T
MARKING
CODE
SS62
SS63
SS64
SS65
SS66
SS68
S610
VRRM *1
(V)
20
30
40
50
60
80
100
VRMS *2
(V)
14
21
28
35
42
56
70
VR *3
(V)
20
30
40
50
60
80
100
VF *4
(V)
0.55
0.70
0.85
Operating
temperature
(oC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FM640-T.PDF ] | |
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