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PDF H11B3 Data sheet ( Hoja de datos )
| Número de pieza | H11B3 | |
| Descripción | (H11B1 - H11B3) Optocoupler / Photodarlington Output / High Gain / With Base Connection | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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H11B1/ H11B2/ H11B3
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain, With Base
Connection
Features
• Isolation test voltage, 5300 VRMS
• Coupling capacitance, 0.5 pF
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code J
i179005
A1
C2
NC 3
6B
5C
4E
e3 Pb
Pb-free
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Description
The H11B1/ H11B2/ H11B3 are industry standard
optocouplers, consisting of a gallium arsenide infra-
red LED and a silicon photodarlington.
Order Information
Part
H11B1
H11B2
H11B3
H11B1-X007
H11B1-X009
H11B2-X009
Remarks
CTR > 500 %, DIP-6
CTR > 200 %, DIP-6
CTR > 100 %, DIP-6
CTR > 500 %, SMD-6 (option 7)
CTR > 500 %, SMD-6 (option 9)
CTR > 200 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
VR
IF
Pdiss
Value
3.0
60
100
1.33
Unit
V
mA
mW
mW/°C
Output
Parameter
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage
Test condition
Symbol
BVCEO
BVECO
BVCBO
Value
25
7.0
30
Unit
V
V
V
Document Number 83609
Rev. 1.5, 26-Oct-04
www.vishay.com
1
1 page  
VCC = 10 V
F=10 KHz,
DF=50% RL
VO
IF =5 mA
ih11b1_09
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Figure 9. Switching Schematic
Package Dimensions in Inches (mm)
321
.248 (6.30)
.256 (6.50)
pin one ID
4 56
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
i178004
ISO Method A
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Document Number 83609
Rev. 1.5, 26-Oct-04
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet H11B3.PDF ] | |
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