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PDF M63804GP Data sheet ( Hoja de datos )

Número de pieza M63804GP
Descripción (M63804xx) 7-Unit 300mA Transistor Array
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POWEREX
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63804P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION
M63804P, M63804FP, M63804GP and M64804KP are
seven-circuit Singe transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated cir-
PIN CONFIGURATION
IN11
IN22
16 O1
15 O2
cuits perform high-current driving with extremely low input-
current supply.
INPUT
IN33
IN44
IN55
14 O3
13 O4
12 O5
OUTPUT
IN66
11 O6
FEATURES
q Four package configurations (P, FP, GP and KP)
mq Medium breakdown voltage (BVCEO 35V)
oq Synchronizing current (IC(max) = 300mA)
q Low output saturation voltage
.cq Wide operating temperature range (Ta = –40 to +85°C)
t4UAPPLICATION
Driving of digit drives of indication elements (LEDs and
heelamps) with small signals
IN77
10 O7
GND 8
9 NC
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
Package type 16P2Z-A(KP) NC : No connection
CIRCUIT DIAGRAM
OUTPUT
INPUT
10.5k
10k
GND
SFUNCTION
taThe M63804P, M63804FP, M63804GP and M63804KP each
have seven circuits consisting of NPN transistor. The transis-
tor emitters are all connected to the GND pin (pin 8)
aThe transistors allow synchronous flow of 300mA collector
current. A maximum of 35V voltage can be applied
www.Dbetween the collector and emitter.
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
Parameter
Collector-emitter voltage
Collector current
Input voltage
Pd Power dissipation
Topr Operating temperature
Tstg Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
M63804P
M63804FP
M63804GP
M63804KP
Ratings
Unit
–0.5 ~ +35
V
300 mA
–0.5 ~ +35
V
1.47
1.00
0.80
om0.78
.c–40 ~ +85
www.DataSheet4U–55 ~ +125
W
°C
°C
Jan. 2000

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