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PDF UPA1857 Data sheet ( Hoja de datos )
| Número de pieza | UPA1857 | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1857 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
• Low on-state resistance
RDS(on)1 = 67.0 mΩ MAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 86.0 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)3 = 95.0 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
• Low Ciss Ciss = 580 pF TYP.
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1857GR-9JG
Power TSSOP8
PACKAGE DRAWING (Unit: mm)
85
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1.2 MAX.
1.0±0.05
0.25
14
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation(1unit)Note2
Total Power Dissipation(2unit)Note2
ID(DC)
ID(pulse)
PT1
PT2
±3.8
±15.2
1.0
1.7
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg –55 to +150 °C
IAS 3.8
A
EAS 33 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. TA = 25°C Mounted on ceramic substrate of 50 cm2 x 1.1 mm
3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15060EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2001
1 page  
10000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
f = 1 MHz
1000
Ciss
100 Coss
10
0.1
Crss
1 10
VDS - Drain to Source Voltage - V
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 VGS = 0 V
10
1
0.1
0.01
0.4
0.6 0.8
1 1.2
VF(S-D) - Body Diode Forward Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
12
10
8 VDD = 48 V
30 V
12 V
6
4
2
ID = 3.8 A
0
0 2 4 6 8 10 12
QG - Gate Charge - nC
µPA1857
SWITCHING CHARACTERISTICS
100
td(off)
10
1
0.1
td(on)
tr
tf
VDD = 30 V
VGS(on) = 10 V
RG = 6 Ω
1
ID - Drain Current - A
10
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100 di/dt = 100 A/µs
VGS = 0 V
10
1
0.1 1.0 10 100
IF - Drain Current - A
Data Sheet G15060EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1857.PDF ] | |
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