PDF HM514260C Data sheet ( Hoja de datos )

Número de pieza	HM514260C
Descripción	262144-word x 16-bit Dynamic Random Access Memory
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HM514260C Series HM51S4260C Series 262,144-word × 16-bit Dynamic Random Access Memory ADE-203-260A (Z) Rev. 1.0 Jun. 12, 1995 Description The Hitachi HM51(S)4260C is CMOS dynamic RAM organized as 262,144-word × 16-bit. HM51(S)4260C has realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4260C offers fast page mode as a high speed access mode. Multiplexed address input permits the HM51(S)4260C to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44-pin plastic TSOPII. Internal refresh timer enables HM51S4260C self refresh operation. Features • Single 5 V (±10%) (HM51(S)4260C-6/7/8) (±5%) (HM51(S)4260C-6R) • High speed — Access time: 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode: 825 mW/788 mW/770 mW/688 mW (max) — Standby mode: 11 mW (max) (HM51(S)4260C-6/7/8) 10.5 mW (max) (HM51(S)4260C-6R) 1.1 mW (max) (L-version) (HM51(S)4260C-6/7/8) 1.05 mW (max) (L-version) (HM51(S)4260C-6R) • Fast page mode capability • 512 refresh cycles: 8 ms 128 ms (L-version) • 2 CAS-byte control • 2 variations of refresh — RAS-only refresh — CAS-before-RAS refresh • Battery backup operation (L-version) • Self refresh operation (HM51S4260C) 1 page HM514260C, HM51S4260C Series Operation Mode The HM51(S)4260C series has the following 11 operation modes. 1. Read cycle 2. Early write cycle 3. Delayed write cycle 4. Read- modify-write cycle 5. RAS-only refresh cycle 6. CAS-before-RAS refresh cycle 7. Self refresh cycle(HM51S4260C) 8. Fast page mode read cycle 9. Fast page mode early write cycle 10. Fast page mode delayed write cycle 11. Fast page mode read- modify-write cycle Inputs RAS LCAS UCAS WE OE Output Operation H H H D D Open Standby H L L H L Valid Standby L L L H L Valid Read cycle L LL L2 D Open Early write cycle L L L L2 H Undefined Delayed write cycle L L L H to L L to H Valid Read-modify-write cycle L H H D D Open RAS-only refresh cycle H to L H L D D Open CAS-before-RAS refresh cycle LH Self refresh cycle (HM51S4260C) LL L H to L H to L H L Valid Fast page mode read cycle L H to L H to L L2 D Open Fast page mode early write cycle L H to L H to L L2 H Undefined Fast page mode delayed write cycle L H to L H to L H to L L to H Valid Fast page mode read-modify-write cycle L L L H H Open Read cycle (Output disabled) Notes: 1. H: High(inactive) L: Low(active) D: H or L 2. tWCS ≥ 0 ns Early write cycle tWCS < 0 ns Delayed write cycle 3. Mode is determined by the OR function of the UCAS and LCAS. (Mode is set by the earliest of UCAS and LCAS active edge and reset by the latest of UCAS and LCAS inactive edge.) However write OPERATION and output HIZ control are done independently by each UCAS, LCAS. ex. if RAS = H to L, LCAS = L, UCAS = H, then CAS-before-RAS refresh cycle is selected. 5 5 Page Read-Modify-Write Cycle Parameter Read-modify-write cycle time RAS to WE delay time CAS to WE delay time Column address to WE delay time OE hold time from WE HM514260C, HM51S4260C Series HM514260C, HM51S4260C -6/-6R -7 -8 Symbol Min Max Min Max Min Max t R WC t RWD t CWD t AWD t OEH 150 — 80 — 35 — 50 — 15 — 180 — 95 — 45 — 60 — 20 — 200 — 105 — 45 — 65 — 20 — Unit Notes ns ns 10 ns 10 ns 10, 13 ns Refresh Cycle Parameter CAS setup time (CBR refresh cycle) CAS hold time (CBR refresh cycle) RAS precharge to CAS hold time CAS precharge time in normal mode HM514260C, HM51S4260C -6/-6R -7 -8 Symbol Min Max Min Max Min Max tCSR 10 — 10 — 10 — tCHR 10 — 10 — 10 — tRPC 10 — 10 — 10 — tCPN 10 — 10 — 10 — Unit Note ns 19 ns 20 ns 19 ns 22 Fast Page Mode Cycle HM514260C, HM51S4260C -6/-6R -7 -8 Parameter Symbol Min Max Min Max Min Max Unit Notes Fast page mode cycle time Fast page mode CAS precharge time Fast page mode RAS pulse width Access time from CAS precharge t PC t CP t RASC t ACP 40 — 45 — 50 — ns 10 — 10 — 10 — ns 22 — 100000 — 100000 — 100000 ns 12 — 35 — 40 — 45 ns 3, 13, 20 RAS hold time from CAS precharge t RHCP Fast page mode read-modify-write cycle tCPW CAS precharge to WE delay time 35 — 55 — 40 — 65 — 45 — 70 — ns ns Fast page mode read-modify-write cycle tPCM time 80 — 95 — 100 — ns 11 11 Page

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