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Numéro de référence | 17N80C2 | ||
Description | SPP17N80C2 | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
www.DataSheet4U.com
Preliminary data
SPP17N80C2
SPB17N80C2
Cool MOS™ Power Transistor
COOLMOS
Feature
Power Semiconductors
· New revolutionary high voltage technology
Product Summary
· Worldwide best RDS(on) in TO 220
· Ultra low gate charge
VDS 800 V
WRDS(on) 290 m
· Periodic avalanche rated
· Extreme dv/dt rated
m· Ultra low effective capacitances
o· Improved noise immunity
ID
P-TO263-3-2
17 A
P-TO220-3-1
t4U.cType
SPP17N80C2
eSPB17N80C2
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4353
Q67040-S4354
Marking
SPP17N80C2
SPB17N80C2
heMaximum Ratings, at Tj = 25 °C, unless otherwise specified
SParameter
Symbol
taContinuous drain current
aTC = 25 °C
TC = 100 °C
ID
.DPulsed drain current, tp limited by Tjmax
wAvalanche energy, single pulse
ID=4A, VDD=50V
ID puls
EAS
wwAvalanche energy, repetitive tAR limited by Tjmax1)
EAR
Value
17
11
51
670
0.5
Unit
A
mJ
ID=17A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
IAR
17 A
Reverse diode dv/dt
dv/dt
6 V/ns
IS=17A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
Page 1
VGS
Ptot
Tj , Tstg
±20 V
-55.2..0+8w15w0w.2D0a0t0a-W°0SC5h-2e9et4U.com
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Pages | Pages 11 | ||
Télécharger | [ 17N80C2 ] |
No | Description détaillée | Fabricant |
17N80C2 | SPP17N80C2 | Infineon Technologies |
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