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دیتاشیت - ST Microelectronics - STY34NB50

شماره قطعه Y34NB50
شرح مفصل STY34NB50
تولید کننده ST Microelectronics 
آرم ST Microelectronics 


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Y34NB50 شرح
www.DataSheet4U.com
® STY34NB50
N - CHANNEL 500V - 0.11- 34 A - Max247
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST Y34NB50
500 V < 0.13 34 A
s TYPICAL RDS(on) = 0.11
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
3
2
1
Max247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Volt age (VGS = 0)
VD GR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
June 1998
Value
Uni t
500 V
500 V
± 30
V
34 A
21.4
A
136 A
450
3.61
W
W/oC
4.5
-65 to 150
150
(1) ISD 34 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ ns
oC
oC
1/8

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