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Numéro de référence | DL-100-7-KERSMD | ||
Description | Photo Diodes | ||
Fabricant | Pacific Silicon Sensor | ||
Logo | |||
DL-100-7-KER SMD
Position Sensing
Photodiodes
Special characteristics:
dual-axis, duo-lateral PSD
active area 10 x 10 mm
high position resolution and
high linearity
Parameters:
active area
Dark current
at 10 V
Capacitance
at 10 V, 100 kHz
Spectral responsivity
at 633 nm
at 850 nm
Interelectrode resistance
at E = 0 lx
Rise time
at 10 V, 50 Ω, 865 nm
Noise limited resolution
at 632 nm, 0.5 µW
Position Detection Error 1)
at 632 nm
Breakdown voltage
Package
Operating temperature
Storage temperature
.com1) measurement conditions:
uSpot size: 0,5 mm,
t4Scan Interval: 1 mm
Wavelength: 633 nm
.datasheewww.silicon-sensor.com
wwwVersion: 02-09-06
DL-100-7-KER SMD
10 x 10 mm
100 mm2
max. 300 nA
typ. 80 nA
typ. 75 pF
typ. 0,4 A/W
typ. 0,62 A/W
typ. 12 kΩ
typ. 4 µs
0.2 µm
+/- 1%
typ. 30 V
Ceramic S.M.
-20 ... +70°C
-60 ... +100°C
Package 22 (SMD)
10.16
15.24
1.6
ANODE 1
CATHODE 2
(2.54)
Chip: DL-100-7
Active area:
(10 x 10) mm2
CATHODE 1 ANODE 2
21.0 ± 0.2
SMD - Kontaktrückseite
SMD - back contact
1.6
www.pacific-sensor.com
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Pages | Pages 2 | ||
Télécharger | [ DL-100-7-KERSMD ] |
No | Description détaillée | Fabricant |
DL-100-7-KERSMD | Photo Diodes | Pacific Silicon Sensor |
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