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Número de pieza | SD2921-10 | |
Descripción | RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
s GOLD METALLIZATION
s EXCELLENT THERMAL STABILITY
s COMMON SOURCE CONFIGURATION
s POUT = 150W MIN. WITH 12.5 dB gain @175
MHz
s THERMALLY ENHANCED PACKAGING FOR
LOWER JUNCTION TEMPERATURES
DESCRIPTION
The SD2921-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2921
MOSFET, it is intended for use in 50V dc large
signal applications up to 200 MHz.
The SD2921-10 is mechanical compatible to the
SD2921 but it offers in addition a better thermal
capability (25% lower thermal resistance),
representing the best-in-class transistor for ISM
applications.
M174
epoxy sealed
ORDER CODE
BRANDING
SD2921-10
SD2921-10
PIN CONNECTION
1. Drain
2. Source
3.Gate
4. Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol
V(BR)DSS
VDGR
VGS
ID
P DISS
Tj
TSTG
Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1MΩ)
Gate-Source Voltage
Drain Current
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
Value
125
125
±20
20
389
200
-65 to 150
Uni t
V
V
V
A
W
oC
oC
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance
Rth(c -s) Case-Heatsink T hermal Resist ance ∗
0.45
0.2
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
oC/ W
oC/ W
1/10
1 page Maximum Thermal Resistance vs Case
Temperature
0.75
0.7
0.65
0.6
0.55
25
45 65
Tc, CASE TEMPERATURE (ºC)
85
DC Safe Operating Area
SD2921-10
100
50
30
20
10 (1)
5
3
2
1
12
5 10 20
Vds(V)
50
(1) Current in this area may be limited by Rds(on)
100 200
5/10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SD2921-10.PDF ] |
Número de pieza | Descripción | Fabricantes |
SD2921-10 | RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs | ST Microelectronics |
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