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Número de pieza | UPD444001 | |
Descripción | 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT | |
Fabricantes | NEC | |
Logotipo | ||
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MOS INTEGRATED CIRCUIT
µPD444001
4M-BIT CMOS FAST SRAM
4M-WORD BY 1-BIT
Description
The µPD444001 is a high speed, low power, 4,194,304 bits (4,194,304 words by 1 bit) CMOS static RAM.
Operating supply voltage is 5.0 V ± 0.5 V.
The µPD444001 is packaged in 32-pin PLASTIC SOJ.
Features
• 4,194,304 words by 1 bit organization
• Fast access time : 10, 11, 12 ns (MAX.)
• Output Enable input for easy application
• Single +5.0 V power supply
Ordering Information
Part number
µPD444001LE-10
µPD444001LE-11
µPD444001LE-12
Package
32-pin PLASTIC SOJ
(10.16 mm (400))
Access time
ns (MAX.)
10
11
12
Supply current mA (MAX.)
At operating
At standby
170 10
160
150
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14947EJ4V0DS00 (4th edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
2000
1 page µPD444001
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
Input leakage current
ILI VIN = 0 V to VCC
Output leakage current
ILO VOUT = 0 V to VCC,
/CS = VIH or /OE = VIH or /WE = VIL
Operating supply current
ICC /CS = VIL,
Cycle time : 10 ns
IOUT = 0 mA,
Cycle time : 11 ns
Minimum cycle time Cycle time : 12 ns
Standby supply current
ISB /CS = VIH, VIN = VIH or VIL
ISB1 /CS ≥ VCC – 0.2 V,
VIN ≤ 0.2 V or VIN ≥ VCC – 0.2 V
High level output voltage
VOH IOH = –4.0 mA
Low level output voltage
VOL IOL = +8.0 mA
Remark
VIN : Input voltage
VOUT : Output voltage
MIN.
–2
–2
2.4
TYP.
MAX.
+2
+2
170
160
150
40
10
0.4
Unit
µA
µA
mA
mA
V
V
Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
Input capacitance
Output capacitance
CIN
COUT
VIN = 0 V
VOUT = 0 V
Remarks 1. VIN : Input voltage
VOUT : Output voltage
2. These parameters are periodically sampled and not 100% tested.
TYP.
MAX.
6
8
Unit
pF
pF
Data Sheet M14947EJ4V0DS
5
5 Page Write Cycle Timing Chart 2 (/CS Controlled)
Address (Input)
/CS (Input)
/WE (Input)
tAS
DIN (Input)
DOUT (Output)
µPD444001
tWC
tCW
tAW
tWP
tWR
tDW
Data in
High impedance
tDH
Cautions 1. /CS or /WE should be fixed to high level during address transition.
2. Do not input data to DOUT while DOUT is in the output state.
Remark Write operation is done during the overlap time of a low level /CS and a low level /WE.
Data Sheet M14947EJ4V0DS
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet UPD444001.PDF ] |
Número de pieza | Descripción | Fabricantes |
UPD444001 | 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT | NEC |
UPD444004 | 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT | NEC |
UPD444004L | 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT | NEC |
UPD444008 | 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT | NEC |
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