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PDF MBM29LV800TE Data sheet ( Hoja de datos )
| Número de pieza | MBM29LV800TE | |
| Descripción | (MBM29LV800BE / MBM29LV800TE) 8M-Bit CMOS Flash Memory | |
| Fabricantes | Fujitsu | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBM29LV800TE (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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SPANSIONTM Flash Memory
Data Sheet
September 2003
This document specifies SPANSIONTM memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a SPANSIONTM product. Future routine
revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about SPANSIONTM memory
solutions.
www.datasheet4u.com
1 page  
MBM29LV800TE/BE60/70/90
s PIN ASSIGNMENTS
A15
A14
A13
A12
A11
A10
A9
A8
N.C.
N.C.
WE
RESET
N.C.
N.C.
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
TSOP (1)
(Marking Side)
MBM29LV800TE/MBM29LV800BE
Normal Bend
(FPT-48P-M19)
48 A16
47 BYTE
46 VSS
45 DQ15/A-1
44 DQ7
43 DQ14
42 DQ6
41 DQ13
40 DQ5
39 DQ12
38 DQ4
37 VCC
36 DQ11
35 DQ3
34 DQ10
33 DQ2
32 DQ9
31 DQ1
30 DQ8
29 DQ0
28 OE
27 VSS
26 CE
25 A0
(Continued)
4
5 Page 
MBM29LV800TE/BE60/70/90
MBM29LV800TE/BE User Bus Operations (BYTE = VIL)
Operation
CE
OE
WE
DQ15/
A-1
A0
A1
A6
A9 DQ7 to DQ0 RESET
Auto-Select Manufacturer Code *1 L L H L L L L VID Code
H
Auto-Select Device Code *1
L L H L H L L VID Code
H
Read *3
L L H A-1 A0 A1 A6 A9
DOUT
H
Standby
H X X X X X X X High-Z
H
Output Disable
L H H X X X X X High-Z
H
Write (Program/Erase)
L H L A-1 A0 A1 A6 A9
DIN
H
Enable Sector Protection *2, *4
L VID
L L H L VID
X
H
Verify Sector Protection *2, *4
L L H L L H L VID Code
H
Temporary Sector Unprotection *5 X X X X X X X X
X
VID
Reset (Hardware) /Standby
X X X X X X X X High-Z
L
Legend : L = VIL, H = VIH, X = VIL or VIH, = Pulse input. See “s DC CHARACTERISTICS” for voltage levels.
*1: Manufacturer and device codes may also be accessed via a command register write sequence.
See “Sector Address Tables (MBM29LV800BE) ” in “s FLEXIBLE SECTOR-ERASE ARCHITECTURE”.
*2: Refer to Sector Protection.
*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*4: VCC = 3.0 V to 3.6 V (MBM29LV800TE/BE 60)
= 2.7 V to 3.6 V (MBM29LV800TE/BE 70/90)
*5: Also used for the extended sector protection.
10
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MBM29LV800TE.PDF ] | |
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