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PDF 2SC1215 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1215 | |
| Descripción | Silicon NPN epitaxial planer type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC1215 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
s Features
q High transition frequency fT.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
50
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
VCBO
VEBO
hFE
IC =100µA, IE = 0
IE = 10µA, IC = 0
VCB = 10V, IE = –2mA
30
3
25
V
V
Base to emitter voltage
VBE VCB = 10V, IE = –2mA
0.72 V
Collector to emitter saturation voltage
Common emitter reverse transfer capacitance
Transition frequency
VCE(sat)
Cre
fT*
IC = 10mA, IB = 1mA
0.1 V
VCE = 10V, IC = 1mA, f = 10.7MHz
1 1.5 pF
VCB = 10V, IE = –15mA, f = 100MHz 600 1200 1600 MHz
Power gain
Base time constant
PG
rbb' · CC
VCB = 10V, IE = –1mA, f = 100MHz
VCB = 10V, IE = –10mA, f = 450kHz
20 dB
25 ps
*fT Rank classification
Rank
T
S
fT(MHz) 600 ~ 1300 900 ~ 1600
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC1215.PDF ] | |
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