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IRG4IBC30FD fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Numéro de référence IRG4IBC30FD
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Fabricant International Rectifier 
Logo International Rectifier 





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IRG4IBC30FD fiche technique
PD- 91751A
IRG4IBC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Very Low 1.59V votage drop
• 2.5kV, 60s insulation voltage …
• 4.8 mm creapage distance to heatsink
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
G
E
n-channel
• Tighter parameter distribution
• Industry standard Isolated TO-220 FullpakTM
outline
Benefits
• Simplified assembly
• Highest efficiency and power density
• HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Fast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
Visol
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case…
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220 FULLPAK
Max.
600
20.3
11
120
120
8.5
120
2500
± 20
45
18
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Typ.
–––
–––
–––
2.0 (0.07)
Max.
2.8
4.1
65
–––
Units
°C/W
g (oz)
1
3/26/99

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