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PDF IRG4IBC30KD Data sheet ( Hoja de datos )
| Número de pieza | IRG4IBC30KD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD -91690A
IRG4IBC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE
UltraFast IGBT
Features
• High switching speed optimized for up to 25kHz
C
with low VCE(on)
• Short Circuit Rating 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
VCES = 600V
VCE(on) typ. = 2.21V
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
E
n-channel
@VGE = 15V, IC = 9.2A
• Industry standard TO-220 FULLPAK
Benefits
• Generation 4 IGBTs offer highest efficiencies available
maximizing the power density of the system
• IGBT's optimized for specific application conditions
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI
• Designed to exceed the power handling capability of
equivalent industry-standard IGBT
TO-220 FULLPAK
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VISOL
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current QU
Clamped Inductive Load Current RU
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
17
9.2
34
34
9.2
34
10
2500
± 20
45
18
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.0 (0.07)
Max.
2.8
3.7
65
–––
Units
°C/W
g (oz)
www.irf.com
1
4/24/2000
1 page  
1500
1200
900
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
600
300
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4IBC30KD
20
VCC = 400V
I C = 16A
16
12
8
4
0
0 20 40 60 80
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.50
VCC = 480V
VGE = 15V
TJ = 25 ° C
1.40 IC = 16A
1.30
1.20
1.10
1.00
0
10 20 30 40
RGRG, ,GGaatteeRReessistaannccee ((OΩh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 RG = O23hΩm
VGE = 15V
VCC = 480V
1
IC = 32 A
IC = 16 A
IC = 88.0AA
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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