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IRG4IBC30S fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRG4IBC30S
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





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IRG4IBC30S fiche technique
PD - 94293
INSULATED GATE BIPOLAR TRANSISTOR
Features
Standard: Optimized for minimum saturation
voltage and low operating freqencies (<1 kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
Industry standard TO-220 Full-Pak
IRG4IBC30S
C
G
E
N-channel
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 18A
Benefits
Generation 4 IGBTs offer highest efficiencies available
IGBTs optimized for specific application conditions
Designed to be a "drop-in" replacement for equivalent
industry -standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Wt
Parameter
Junction-to-Case
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220 Full-Pak
Max.
600
23.5
13.0
68
68
± 20
10
45
18
-55 to + 150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
mJ
W
°C
Typ.
–––
–––
2.1 (0.075)
Max.
2.8
65
–––
Units
°C/W
g (oz)
1
08/02/01

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