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GM71C4403C fiches techniques PDF

Hynix Semiconductor - 1M x 4 Bit CMOS DRAM

Numéro de référence GM71C4403C
Description 1M x 4 Bit CMOS DRAM
Fabricant Hynix Semiconductor 
Logo Hynix Semiconductor 





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GM71C4403C fiche technique
LG Semicon Co.,Ltd.
Description
The GM71C4403C is the new generation dynamic
RAM organized 1,048,576 words x 4 bit.
GM71C4403C has realized higher density, higher
performance and various functions by utilizing
advanced CMOS process technology. The
GM71C4403C offers Extended Data Out (EDO)
Mode as a high speed access Mode. Multiplexed
address inputs permit the GM71C4403C to be
packaged in a standard 300mil 20(26) pin plastic
SOJ , and standard 300mil 20(26) pin plastic TSOP
II. The package size provides high system bit
densities and is compatible with widely available
automated testing and insertion equipment. System
oriented features include single power supply of
5V+/-10% tolerance, direct interfacing capability
with high performance logic families such as
Schottky TTL.
GM71C4403C
1,048,576 WORDS x 4BIT
CMOS DYNAMIC RAM
Features
* 1,048,576 Words x 4 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
tRAC tCAC tRC
tHPC
GM71C4403C-60
60 15 104 25
GM71C4403C-70
70 18 124 30
GM71C4403C-80
80 20 144 35
* Low Power
Active : 605/550/495mW (MAX)
Standby : 5.5mW (CMOS level : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
*1024 Refresh Cycles/16ms
Pin Configuration
20 (26) SOJ
I/O1 1
I/O2 2
WE 3
RAS 4
A9 5
A0 6
A1 7
A2 8
A3 9
VCC 10
20 VSS
19 I/O4
18 I/O3
17 CAS
16 OE
15 A8
14 A7
13 A6
12 A5
11 A4
(Top View)
20 (26) TSOP II
I/O1 1
I/O2 2
WE 3
RAS 4
A9 5
20 VSS
VSS 20
19 I/O4 I/O4 19
18 I/O3 I/O3 18
17 CAS CAS 17
16 OE
OE 16
1 I/O1
2 I/O2
3 WE
4 RAS
5 A9
A0 6
A1 7
A2 8
A3 9
VCC 10
15 A8
14 A7
13 A6
12 A5
11 A4
A8 15
A7 14
A6 13
A5 12
A4 11
6 A0
7 A1
8 A2
9 A3
10 VCC
NORMAL TYPE
REVERSE TYPE
(Top View)
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