|
|
PDF TC58FVB160A Data sheet ( Hoja de datos )
| Número de pieza | TC58FVB160A | |
| Descripción | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TC58FVB160A (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
TC58FVT160/B160AFT/AXB-70,-10
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M × 8 BITS / 1M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION
The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash
memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160/B160A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip.
FEATURES
• Power supply voltage
• Block erase architecture
•
•
•
VDD = 2.7 V~3.6 V
Operating temperature
Ta = −40°C~85°C
Organization
2M × 8 bits / 1M × 16 bits
Functions
Auto Program, Auto Erase
Fast Program Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
•
•
•
•
•
1 × 16 Kbytes / 2 × 8 Kbytes
1 × 32 Kbytes / 31 × 64 Kbytes
Boot block architecture
TC58FVT160AFT/AXB: top boot block
TC58FVB160AFT/AXB: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
105 cycles typ.
Access time
70 ns
100 ns
(CL: 30 pF)
(CL: 100 pF)
Power consumption
5 µA
30 mA
(Standby)
(Read operation)
15 mA
(Program/Erase operations)
• Package
TC58FVT160/B160AFT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVT160/B160AXB:
P-TFBGA48-0608-0.80AZ (weight: 0.090 g)
000630EBA1
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document
shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
2002-08-06 1/41
1 page  
TC58FVT160/B160AFT/AXB-70,-10
COMMAND SEQUENCES
COMMAND
SEQUENCE
BUS
WRITE
CYCLES
REQ’D
FIRST BUS
WRITE CYCLE
Addr. Data
SECOND BUS
WRITE CYCLE
Addr. Data
THIRD BUS FOURTH BUS
WRITE CYCLE WRITE CYCLE
Addr. Data Addr. Data
FIFTH BUS
WRITE CYCLE
Addr. Data
SIXTH BUS
WRITE CYCLE
Addr. Data
Read/Reset
1 XXXH F0H
Read/Reset
Word
Byte
3
555H
2AAH
AAH
55H
555H
(1) (2)
F0H RA
RD
AAAH
555H
AAAH
ID Read
Word
Byte
3
555H
2AAH
AAH
55H
555H
(3)
90H IA
(4)
ID
AAAH
555H
AAAH
Word
Auto-Program
Byte
4
555H
2AAH
AAH
55H
555H
(5) (6)
A0H PA
PD
AAAH
555H
AAAH
Program Suspend
1
Program Resume
Auto Chip
Erase
Word
Byte
1
6
VIH or
VIL
B0H
VIH or
VIL
30H
555H
2AAH
555H
555H
2AAH
555H
AAH 55H 80H AAH 55H 10H
AAAH
555H
AAAH
AAAH
555H
AAAH
Auto Block
Erase
Word
Byte
6
555H
2AAH
AAH
55H
555H
555H
2AAH
(7)
80H AAH
55H BA
30H
AAAH
555H
AAAH
AAAH
555H
Block Erase Suspend
Block Erase Resume
Block Protect 2
1 VIH or B0H
VIL
1 VIH or 30H
VIL
(8) (8) (9)
4 XXXH 60H BPA
60H XXXH 40H BPA BPD
Verify Block
Protect
Word
Byte
3
555H
2AAH
AAH
55H
555H
(8) (9)
90H BPA BPD
AAAH
555H
AAAH
Fast Program
Set
Word
Byte
Fast Program
Fast Program Reset
3
2
2
555H
AAAH
XXXH
XXXH
AAH
A0H
90H
2AAH
555H
(5)
PA
XXXH
55H
(6)
PD
(12)
F0H
555H
AAAH
20H
Hidden ROM
Mode Entry
Word
Byte
3
555H
2AAH
555H
AAH 55H 88H
AAAH
555H
AAAH
Hidden ROM
Program
Word
Byte
4
555H
2AAH
AAH
55H
555H
(5) (6)
A0H PA
PD
AAAH
555H
AAAH
Hidden ROM
Erase
Word
Byte
6
555H
2AAH
AAH
55H
555H
555H
2AAH
(7)
80H AAH
55H BA
30H
AAAH
555H
AAAH
AAAH
555H
Hidden ROM
Mode Exit
Word
Byte
4
555H
2AAH
555H
AAH 55H 90H XXXH 00H
AAAH
555H
AAAH
Query
Command
Word
Byte
2
55H
AAH
(10) (11)
98H CA
CD
Notes: The system should generate the following address patterns:
Word Mode: 555H or 2AAH on address pins A10~A0
Byte Mode: AAAH or 555H on address pins A10~A-1
DQ8~DQ15 are ignored in Word Mode.
(1) RA: Read Address
(2) RD: Read Data
(3) IA: ID Read Address (A6, A1, A0)
Manufacturer Code = (0, 0, 0)
Device Code = (0, 0, 1)
(4) ID: ID Data
(5) PA: Program Address
(6) PD: Program Data
(7) BA: Block Address = A19~A12
(8) BPA: Block Address and ID Read Address (A6, A1, A0)
Block Address = A19~A12
ID Read Address = (0, 1, 0)
(9) BPD: Verify Data
(10) CA:CFI Address
(11) CD:CFI Data
(12) F0H: 00H is valid too
2002-08-06 5/41
5 Page 
Hidden ROM Area
TC58FVT160/B160AFT/AXB-70,-10
The TC58FVT160/B160A features a 64-Kbyte hidden ROM area which is separate from the memory cells. The
area consists of one block. Data Read, Write and Protect can be performed on this block. Because Protect cannot
be released, once the block is protected, data in the block cannot be overwritten.
The hidden ROM area is located in the address space indicated in the HIDDEN ROM AREA ADDRESS
TABLE. To access the Hidden ROM area, input a Hidden ROM Mode Entry command. The device now enters
Hidden ROM Mode, allowing Read, Write, Erase and Block Protect to be executed. Write and Erase operations
are the same as auto operations except that the device is in Hidden ROM Mode. To protect the hidden ROM area,
use the block protection function. The operation of Block Protect here is the same as a normal Block Protect
except that VIH rather than VID is input to RESET . Once the block has been protected, protection cannot be
released, even using the temporary block unprotection function. Use Block Protect carefully.
To exit Hidden ROM Mode, use the Hidden ROM Mode Exit command. This will return the device to Read
Mode.
HIDDEN ROM AREA ADDRESS TABLE
TYPE
BOOT BLOCK
ARCHITECTURE
TC58FVT160A TOP BOOT BLOCK
TC58FVB160A BOTTOM BOOT BLOCK
BYTE MODE
ADDRESS RANGE
SIZE
1F0000H~1FFFFFH
64 Kbytes
000000H~00FFFFH
64 Kbytes
WORD MODE
ADDRESS RANGE
SIZE
F8000H~FFFFFH
32 Kwords
000000H~007FFFH
32 Kwords
2002-08-06 11/41
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet TC58FVB160A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TC58FVB160A | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | Toshiba Semiconductor |
| TC58FVB160FT | 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |