No Preview Available !
STB55NF06, STP55NF06, STP55NF06FP
N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in
D²PAK, TO-220 and TO-220FP packages
Datasheet — production data
Features
Order code
STB55NF06
STP55NF06
STP55NF06FP
VDSS RDS(on) max.
ID
60 V
< 0.018 Ω
50 A
50 A (1)
1. Refer to soa for the max allowable current value on
FP-type due to Rth value
■ 100% avalanche tested
■ Exceptional dv/dt capability
Applications
■ Switching application
Description
These Power MOSFETs have been developed
using STMicroelectronics’ unique STripFET
process, which is specifically designed to
minimize input capacitance and gate charge. This
renders the devices suitable for use as primary
switch in advanced high-efficiency isolated DC-
DC converters for telecom and computer
applications, and applications with low gate
charge driving requirements.
TAB
3
2
1
TO-220
TAB
3
1
D2PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$ OR 4!"
'
3
!-V
Table 1. Device summary
Order code
Marking
STB55NF06
B55NF06
STP55NF06
P55NF06
STP55NF06FP
P55NF06FP
Package
D²PAK
TO-220
TO-220
Packaging
Tape and reel
Tube
May 2012
This is information on a product in full production.
Doc ID 7544 Rev 11
1/19
www.st.com
19
STB55NF06, STP55NF06, STP55NF06FP
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 50 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 50 A,
di/dt = 100 A/µs,
VDD = 30 V, Tj = 150 °C
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
50 A
-
200 A
- 1.5 V
75
- 170
4.5
ns
nC
A
Doc ID 7544 Rev 11
5/19
STB55NF06, STP55NF06, STP55NF06FP
Figure 21. D²PAK (TO-263) drawing
Package mechanical data
Figure 22. D²PAK footprint(a)
16.90
0079457_T
12.20
1.60
5.08
9.75
a. All dimensions are in millimeters
Doc ID 7544 Rev 11
3.50
Footprint
11/19