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Número de pieza | IRFP17N50L | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRFP17N50L
Applications
SMPS MOSFET HEXFET® Power MOSFET
l
l
Switch Mode Power Supply (SMPS)
Zero Voltage Switching (ZVS) and High
VDSS
Frequency Circuit
500V
RDS(on) typ. Trr typ. ID
0.28Ω
170ns 16A
l Uninterruptible Power Supply
l High Speed Power Switching
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
Absolute Maximum Ratings
Parameter
Max.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
16
11
64
220
1.8
± 30
13
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
-55 to + 150
300
Mounting Torque, 6-32 or M3 screw
10
TO-247AC
Units
A
W
W/°C
V
V/ns
°C
lbft.in(N.m)
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
16
––– –––
64
––– –––
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 16A, VGS = 0V
––– 170 250
––– 220 330
ns
TJ = 25°C
TJ = 125°C
IF = 16A
di/dt = 100A/µs
––– 470 710 nC TJ = 25°C
––– 810 1210
TJ = 125°C
––– 7.3 11 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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1
09/20/01
1 page IRFP17N50L
20
16
12
8
4
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFP17N50L.PDF ] |
Número de pieza | Descripción | Fabricantes |
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